Anisotropy and orientational dependence of magnetization reversal processes in epitaxial ferromagnetic thin films

Daboo, C.; Hicken, R. J.; Gu, Erdan; Gester, M.; Gray, S. J.; Eley, D. E. P.; Ahmad, Ejaz; Bland, J. A. C.; Ploessl, R.; Chapman, J. N.

doi:10.1103/physrevb.51.15964

Cited by 125 publications

(51 citation statements)

References 15 publications

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“…Fe was deposited using an e-beam evaporator EFM3͑Omicron͒. In the initial studies of Fe growth on semiconductors, especially on GaAs, growth temperatures of 150-175°C have been preferred 10,11 probably due to better growth of the Fe film itself. However, when it comes to the optical and electrical characteristics of the Fe/InAs heteroepitaxial material system, this temperature range did not necessarily yield the best result based on our initial study of this system.…”

Section: Fabrication and Measurement Setupmentioning

confidence: 99%

Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection

Yoh

Ohno

Sueoka

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have investigated Fe/InAs interfaces for two different growth temperatures of Fe and the effect on the spin injection properties through an Fe/InAs junction. Secondary ion mass spectroscopy and transmission electron microscopy studies of the Fe/InAs interfaces revealed that Fe films grown at 175°C clearly suffer from increased reaction and out-diffusion of semiconductor constituents compared to those grown at 23°C. The lower temperature samples showed an increased degree of spin polarization of 18%-20% which translates to 36%-40% of spin injection efficiency assuming selection rules between heavy and light holes in the p-type InAs substrate. It is close to the spin polarization of 40%-45% in an Fe spin injector itself.

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Section: Fabrication and Measurement Setupmentioning

confidence: 99%

Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection

Yoh

Ohno

Sueoka

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…In a few cases, As-capped epilayers and special etch stop buffer layers grown on the commercial wafers were used as substrates to produce samples for further investigations using transmission electron microscopy based techniques. 14,19 It has been reported previously that heating of the GaAs substrates to temperatures above 600°C prior to material deposition desorbs the native surface oxide and yields an ordered surface structure. 20 However, we were unable to observe LEED spots after this treatment and Auger spectroscopy revealed that the surface oxide was desorbed but a considerable amount of carbon remained on the surface.…”

Section: Methodsmentioning

confidence: 99%

“…26 These steps are caused when the magnetization in the film plane jumps over each of the two hard axes indicating the presence of cubic IPMA. 14 Within the coherent rotation model, absolute values of the cubic and the uniaxial anisotropy fields could in principal be determined from the saturation fields for the hard axis directions. However, from the MOKE loops shown in Fig.…”

Section: A (001) Surfacementioning

confidence: 99%

“…11,12 The magnetization reversal process in Fe/ GaAs͑001͒ films was studied using the magneto-optic Kerr effect ͑MOKE͒. 13,14 No evidence for dominating perpendicular anisotropy was found when studying the extraordinary Hall effect in Fe/GaAs films. 15 This is in contrast to several monolayer thick Fe films on Ag͑001͒, for which a strong perpendicular anisotropy was predicted 16 and observed.…”

Section: Introductionmentioning

confidence: 99%

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Continuous evolution of the in-plane magnetic anisotropies with thickness in epitaxial Fe films

Gester

Daboo

Hicken

et al. 1996

Journal of Applied Physics

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148

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Low temperature oxidation mechanisms of nanocrystalline magnetite thin film J. Appl. Phys. 113, 013510 (2013) In situ control of electronic phase separation in La1/8 Pr4/8Ca3/8MnO3/PNM-PT thin films using ferroelectricpoling-induced strain J. Appl. Phys. 113, 013705 (2013) Spin precession modulation in a magnetic bilayer Appl. Phys. Lett. 101, 262406 (2012) Alternating domains with uniaxial and biaxial magnetic anisotropy in epitaxial Fe films on BaTiO3 Appl. Phys. Lett. 101, 262405 (2012) Additional information on J. Appl. Phys. We have studied the evolution of the magnetic in-plane anisotropy in epitaxial Fe/GaAs films of both ͑001͒ and ͑110͒ orientation as a function of the Fe layer thickness using the longitudinal magneto-optic Kerr effect and Brillouin light scattering. Magnetization curves which are recorded in situ during film growth reveal a continuous change of the net anisotropy axes with increasing film thickness. This behavior can be understood to arise from the combination of a uniaxial and a cubic in-plane magnetic anisotropy which are both thickness dependent. Structural analysis of the substrate and Fe film surfaces provides insight into the contribution of atomic steps at the interfaces to the magnetic anisotropy. Changing the degree of crystalline order at the Fe-GaAs interface allows us to conclude that the magnetic anisotropies are determined by atomic scale order.

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“…This produces M ʈ -H and M Ќ -H MOKE loops which can be used to determine the orientation and relative strength of the magnetization relative to the cooling-field direction as sampled over the area of the laser beam. 14 Figure 1 shows the field dependence of the magnetization components parallel and perpendicular to the coolingfield direction for 0 = 0°and different angles ⌬ between the external field and the bias direction. For = ⌬ = 0°and descending fields no perpendicular component is observed; that is, the reversal mechanism occurs through domain nucleation and motion.…”

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confidence: 99%

Angular dependence of the magnetization reversal in exchange-biased Fe∕MnF2

Arenholz

Liu

2005

Applied Physics Letters

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A detailed study of exchange-biased Fe/MnF 2 bilayers using magneto-optical Kerr Effect shows that the magnetization reversal occurs almost fully through domain wall nucleation and propagation for external fields parallel to the exchange bias direction.For finite angles φ between bias and external field the magnetization is aligned perpendicular to the field cooling direction for a limited field range for decreasing fields.For external fields perpendicular to the bias direction the magnetization aligns with the field cooling direction for descending and ascending fields before fully reversing. The field range for which the magnetization is close to perpendicular to the external field can be estimated using a simple effective field model.

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Anisotropy and orientational dependence of magnetization reversal processes in epitaxial ferromagnetic thin films

Cited by 125 publications

References 15 publications

Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection

Reduced interface reaction during the epitaxial Fe growth on InAs for high efficiency spin injection

Continuous evolution of the in-plane magnetic anisotropies with thickness in epitaxial Fe films

Angular dependence of the magnetization reversal in exchange-biased Fe∕MnF2

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