Anisotropy in surface migration of Si and Ge on Si(001)

Mo, Y. W.; Lagally, M. G.

doi:10.1016/0039-6028(91)91177-y

Cited by 257 publications

(81 citation statements)

References 22 publications

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“…Te is also known to be an excellent surfactant in the growth of GaAs(0 0 1) [14]. However, the detailed surfactant mechanism is not understood in either situation [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Finite temperature studies of Te adsorption on

Sen¹,

Çiraci²,

Batra³

et al. 2002

Surface Science

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We perform first principles density functional calculations to investigate the adsorption of Te on the Si(0 0 1) surface from low coverage up to a monolayer coverage. At low coverage, a Te atom is adsorbed on top of the Si surface dimer bond. At higher coverages, Te atoms adsorption causes the Si-Si dimer bond to break, lifting the (2 Â 1) reconstruction. We find no evidence of the Te-Te dimer bond formation as a possible source of the (2 Â 1) reconstruction at a monolayer coverage. Finite temperature ab initio molecular dynamics calculations show that Te covered Si(0 0 1) surfaces do not have any definitive reconstruction. Vibrations of the bridged Te atoms in the strongly anharmonic potentials prevent the reconstruction structure from attaining any permanent, two-dimensional periodic geometry. This explains why experiments attempting to find a definite model for the reconstruction reached conflicting conclusions.

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“…Te is also known to be an excellent surfactant in the growth of GaAs(0 0 1) [14]. However, the detailed surfactant mechanism is not understood in either situation [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Finite temperature studies of Te adsorption on

Sen¹,

Çiraci²,

Batra³

et al. 2002

Surface Science

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show abstract

“…The same behaviour was also observed in our evaporation source calibration experiments, Si on Si(001) and Ge on Si(001). This anisotropy arises due to a sticking coefficient which is much larger at the end of the dimer rows than along the dimer rows [13]. Furthermore, the formation energy of S A type steps is lower than that of S B type [22] and the anisotropic growth of the islands perpendicular to the underlying Si(001) dimer rows is also thermodynamically preferred.…”

Section: Resultsmentioning

confidence: 99%

“…Since the SiGe alloy system is compatible with the existing silicon microfabrication technology, it represents a challenging alternative to III-V semiconductor based device technology and recently, high speed commercial applications have started to emerge from SiGe based devices [12]. 0039-6028/95/$09.50 © 1995 Elsevier Science B.V. All rights reserved Recently silicon homoepitaxy on Si(001) [13][14][15] and germanium heteroepitaxy on Si(001) [13,16,17] have been investigated in detail using scanning tunneling microscopy (STM) by various groups. These experiments lead to better understanding of surface diffusion and epitaxial growth at the atomic scale.…”

Section: Introductionmentioning

confidence: 99%

Initial stages of SiGe epitaxy on Si(001) studied by scanning tunneling microscopy

Oral

Ellialtioglu

1995

Surface Science

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We have studied the initial stages of strained SiGe alloy growth on the Si(001)-(2 × 1) surface by scanning tunneling microscopy. The Si0.36Ge0.64 alloy was grown on the silicon substrate at various coverages (0.13-3.6 ML) and at different temperatures (~ 310-470°C). The growth was one dimensional, preferring the direction perpendicular to the underlying silicon dimer rows at low coverages and low temperatures. Anti-phase boundaries were observed to lead multi-layer growth. Strong interaction between the overlayer and the substrate was found to buckle the substrate as well as SiGe dimers. Different growth mechanisms, island formation and step flow, were identified at low and high substrate temperatures. (2 X n) ordering of the strained overlayer was only observed at an intermediate growth temperature (~ 390°C).

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“…On a Si(001) vicinal face, the dimers are parallel to the steps on T A terrace and perpendicular to the steps on T B terrace. The surface diffusion along the dimer rows is faster than that perpendicular to the dimer rows [2,3]. The anisotropy of the surface diffusion changes alternately: on T A , the surface diffusion parallel to the steps is faster than that perpendicular to the steps, and the relation is the opposite on T B .…”

Section: Introductionmentioning

confidence: 99%

“…The step in the lower side of T A , which is called S A , is smoother than that in the lower side of T B , which is called S B [2]. The difference in the smoothness changes properties of the two steps.…”

Section: Introductionmentioning

confidence: 99%

Effect of alternation of kinetic coefficients on step instabilities on Si(001) vicinal face

Sato

Deura

2008

Journal of Crystal Growth

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With taking account of alternation of kinetic coefficients, we study the possibility of step instabilities on a Si(001) vicinal face. In sublimation, a step with large kinetic coefficient recedes faster than that with small kinetic coefficient, and step pairs are formed. The upper side step in the step pair is the step with large kinetic coefficient. An equidistant array of the pairs is unstable against bunching. Number of steps N max in bunches increases with time as N max ∼ t β . The exponent β = 0.5 when the bunch grows via successive collisions of step pairs, and β ≈ 1.2 when the bunch grows via coalescence of bunches.

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Anisotropy in surface migration of Si and Ge on Si(001)

Cited by 257 publications

References 22 publications

Finite temperature studies of Te adsorption on

Finite temperature studies of Te adsorption on

Initial stages of SiGe epitaxy on Si(001) studied by scanning tunneling microscopy

Effect of alternation of kinetic coefficients on step instabilities on Si(001) vicinal face

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