Anisotropy in the growth rates of silicon deposited by reduction of silicon tetrachloride

The incidence of hillocks and stacking faults in thick silicon epitaxial layers grown by using dichlorosilane as a source has been examined as a function of the growth parameters for the (111), (110), and (100) orientations. It was determined that the hillock and stacking fault densities decrease with increasing growth temperature and decreasing dichlorosilane flow. A continual decrease in the hillock density was observed with decreasing growth rate, without the observation of a critical growth rate above which hillocks form in the case of silicon epitaxy using silicon tetrachloride. Stacking faults were invariably found at every hillock site. For epitaxial growth performed using dichlorosilane at 1160~ with a growth rate of 1.5 microns per minute, thick epitaxial layers could be grown with hillock and stacking fault densities of less than 10/cm ~ for all three surface orientations. Since this defect density is significantly lower than that observed in the silicon tetrachloride system, the dichlorosilane epitaxial growth process is more suitable for the growth of thick epitaxial layers which require relatively high growth rates.* Electrochemical Society Active Member.

mentioning

confidence: 95%

mentioning

confidence: 95%

Defect Control during Silicon Epitaxial Growth Using Dichlorosilane

Baliga

1982

“…The lowering of the crystal growth temperature is important to obtain the defect-free crystal, but a surface migration gives rise to an important factor to restrict the crystal growth temperature, because the increase of the substrate temperature enhances the surface migration. Surface migration is the key factor of the crystal growth mechanism (6)(7)(8)(9)(10). Photoepitaxy was proposed by the author (J. Nishizawa) in 1961 and has been applied to Si and GaAs vapor-phase epitaxy (11,12), resulting in higher crystal quality at a lower epitaxial temperature.…”

mentioning

confidence: 99%

Deposition Mechanism of GaAs Epitaxy

Nishizawa

Kurabayashi

Abe

et al. 1987

Molecular layer epitaxy is a crystal growth method using chemical reactions of adsorbates on semiconductor surfaces and is able to control the thickness of epitaxial films in the order of atomic accuracy. In this paper, we report on a study of monomolecular layer growth mechanisms. GaAs MLE was demonstrated in (TMG-AsH3) and (TEG-AsH3) systems. Monomolecular layer growth for the (100) face was realized at 500 ~ and 320~ in the (TMG-AsH~) and (TEG-AsH3) systems, respectively. It was also studied for the (111) B face in both systems. In the (TMG-AsH3) system, the film thickness per cycle did not depend on TMG and AsH3 pressure, gas injection mode, and wafer misorientation. It is suggested that MLE growth is dominated by the adsorption of Ga-complex bonding with the dangling bonds of surface arsenic atoms. The deviation from this model at the high temperature region was also studied. The difference in the film thickness per cycle was studied among various faces of the substrates. Surface migration species was also clarified for the first time.

“…The back of the wafer was preferentially wet etched and subjected to a n § diffusion for the back ohmic contact. The wafers were then cleaned using the standard RCA etch (9). One wafer was reserved to prepare control samples.…”

Section: Methodsmentioning

confidence: 99%

Induced Convective Effects on Intrawafer Uniformity in LPCVD

Velander¹,

White

1987

GaAs EPITAXY 951stay there stably during the exhausting time and reacts with AsH~ during AsH3 injection to produce a monomolecular layer GaAs film. We tried also to use TEG instead of TMG, and monomolecular layer growth is realized at low temperature (-320~ In (TMG-AsH3) and (TEG-ASH3) systems, formation of Ga droplets and surface morphology are observed by SEM and the Nomarski method, respectively. The film thickness per cycle is measured as a function of the substrate temperature on various faces of the substrates. It is suggested that essential migration species is Ga-complex but not As-complex adsorbate, and the deviation from monomolecular layer growth at high temperature is due to the formation of Ga droplets, which are produced by the pyrolysis of Gacomplex adsorbate.In the case of the (TMG-AsH3) system, the film thickness per cycle for (100), (lll)B, and (lll)A is measured, and it is suggested that Ga-complex adsorbs on arsenic atoms and does not adsorb on Ga atoms of the surface. Manuscript