2022
DOI: 10.1039/d2nr02599j
|View full text |Cite
|
Sign up to set email alerts
|

Anisotropy-induced phase transitions in an intrinsic half-Chern insulator Ni2I2

Abstract: An intrinsic half-Chern insulator, possessing 100% spin-polarized edge states, is found in Ni2I2 monolayers. A combined state of a half metal and a half-Chern insulator occurs in the material under strain, associated with the unique anisotropic bands.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(2 citation statements)
references
References 66 publications
0
2
0
Order By: Relevance
“…[16][17][18] Nevertheless, there are few 2D FM Chern insulators naturally available for spintronic applications. 6,[19][20][21] The development of valleytronics could be similar to that of spintronics. The quantum valley Hall effect, arising from spatial non-centrosymmetry, has undergone extensive investigation across various valley systems.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…[16][17][18] Nevertheless, there are few 2D FM Chern insulators naturally available for spintronic applications. 6,[19][20][21] The development of valleytronics could be similar to that of spintronics. The quantum valley Hall effect, arising from spatial non-centrosymmetry, has undergone extensive investigation across various valley systems.…”
Section: Introductionmentioning
confidence: 99%
“…16–18 Nevertheless, there are few 2D FM Chern insulators naturally available for spintronic applications. 6,19–21…”
Section: Introductionmentioning
confidence: 99%