Anisotropy of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition

Li, D.S.; Chen, H.; Yu, Haisheng; Zheng, Xiaohong; Huang, Qi; Zhou, Jun

doi:10.1016/j.jcrysgro.2004.02.003

Cited by 42 publications

(30 citation statements)

References 11 publications

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“…Anisotropy stripe features along the c-direction and surface undulation along the m-direction were observed on both of the samples, which is similar to the previous report [2,8,11]. The RMS roughness of samples C and D was measured as 1.94 and 1.52 nm, respectively, indicating the improvement of surface smoothness by the use of high quality AlN/AlGaN buffer.…”

Section: Resultssupporting

confidence: 88%

“…In order to improve the crystal quality of the a-plane GaN film, AlN and GaN nucleation or buffer layers were used and optimized [2,[8][9][10], similar to the c-plane GaN growth [11,12]. Recently, Dai et al [13] reported that the low temperature AlGaN nucleation layer showed superior properties than those of the AlN and GaN nucleation layer due to the reduction in lattice mismatch with the r-plane sapphire and a-plane GaN.…”

Section: Introductionmentioning

confidence: 99%

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MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate

Öztürk

Demirel

et al. 2010

Journal of Crystal Growth

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a b s t r a c tNon-polar a-plane GaN film with crystalline quality and anisotropy improvement is grown by use of high temperature AlN/AlGaN buffer, which is directly deposited on r-plane sapphire by pulse flows. Compared to the a-plane GaN grown on AlN buffer, X-ray rocking curve analysis reveals a remarkable reduction in the full width at half maximum, both on-axis and off-axis. Atomic force microscopy image exhibits a fully coalesced pit-free surface morphology with low root-mean-square roughness ( $ 1.5 nm). Photoluminescence is carried out on the a-plane GaN grown on r-plane sapphire. It is found that, at low temperature, the dominant emission at $ 3.42 eV is composed of two separate peaks with different characteristics, which provide explanations for the controversial attributions of this peak in previous studies.

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate

Öztürk

Demirel

et al. 2010

Journal of Crystal Growth

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“…These fields can spatially separate electrons and holes in the quantum wells and consequently decrease the overlaps of their wave functions, resulting in reduction of the recombination efficiency and red-shift of the emission wavelength in light-emitting devices. To prevent this adverse effect, many groups have tried to fabricate devices on the non-polar a-plane [9][10][11][12][13][14][15][16][17]. However, for the anisotropy nature of the growth mode, it is hard to obtain a-plane GaN of high quality [9].…”

Section: Introductionmentioning

confidence: 99%

“…To prevent this adverse effect, many groups have tried to fabricate devices on the non-polar a-plane [9][10][11][12][13][14][15][16][17]. However, for the anisotropy nature of the growth mode, it is hard to obtain a-plane GaN of high quality [9]. Various buffers have been used for the growth of a-plane GaN [9,10].…”

Section: Introductionmentioning

confidence: 99%

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The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD

Dai

et al. 2011

Sci. China Phys. Mech. Astron.

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Nonpolar a-plane (1120) GaN films have been grown on r-plane (1 102) sapphire by metal-organic chemical vapor deposition (MOCVD) under different growth pressures. The as-grown films are investigated by optical microscopy, high-resolution X-ray diffraction (HRXRD) and Raman scattering. As growth pressure rises from 100 mbar to 400 mbar, the surface gets rougher, and the in-plane XRD full width at half maximum (FWHM) along the c-axis [0001] increases while that along the m-axis [1100] decreases. Meanwhile, residential stresses are reduced along both the c-axis and the m-axis. The structural anisotropy feature under 400 mbar is inverted with respect to 100 mbar, and the weakened anisotropy is achieved under a moderate pressure of 200 mbar, probably due to the suppressed Ga atomic migration along the c-axis under a larger pressure. We propose that pressure can affect a-plane growth through the V/III ratio.GaN, anisotropy, XRD, growth pressure, MOCVD

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Defects and Interfacial Structure ofa‐plane GaN onr‐plane Sapphire

Kröger

2008

Nitrides With Nonpolar Surfaces

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Anisotropy of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition

Cited by 42 publications

References 11 publications

MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate

MOCVD growth and optical properties of non-polar (11–20) a-plane GaN on (10–12) r-plane sapphire substrate

The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD

Defects and Interfacial Structure ofa‐plane GaN onr‐plane Sapphire

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