Anisotropy of critical currents and fields in sputtered and evaporated superconducting Nb&amp;lt;inf&amp;gt;3&amp;lt;/inf&amp;gt;Ge films

Braun, H. F.; Haeussler, E.; Saur, E.

doi:10.1109/tmag.1977.1059456

Cited by 16 publications

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“…The stronger pinning of the silicon substrate film may be due to either higher surface or interior inhomogeneity. Besides the peak in when the field is aligned near parallel to the film surface, there is a smaller peak when it is aligned near perpendicular to this surface This feature has been observed in HTS films [8], [9] and in some low temperature superconducting (LTS) films of NbTa [10], [11]. In the LTS films, it has sometimes been attributed to columnar grain boundary inhomogeneities [10], [11].…”

Section: Thismentioning

confidence: 99%

“…Besides the peak in when the field is aligned near parallel to the film surface, there is a smaller peak when it is aligned near perpendicular to this surface This feature has been observed in HTS films [8], [9] and in some low temperature superconducting (LTS) films of NbTa [10], [11]. In the LTS films, it has sometimes been attributed to columnar grain boundary inhomogeneities [10], [11]. These columnar grain boundaries are essentially extended 2-D defects and are thought to produce stronger pinning in a situation in which the flux lines are aligned parallel to the columnar defect; the perpendicular flux lattice density will relate to the macroscopic pinning strength In the case of the HTS, it has sometimes been attributed to pinning along the spiral defects.…”

Section: Thismentioning

confidence: 99%

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Anisotropic Jc-ϑ measurements at low fields on a-MoSi thin films: evidence of a two-dimensional regime

Stephens

1998

IEEE Trans. Appl. Supercond.

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Transport critical current versus applied field inclination (J J Jc 0 # plots) have been made on a-MoSi thin films in low fields of order 0.04 T. The applied field was rotated (at fixed magnitude) in a plane both parallel (' = 0 ) and perpendicular (' = 90 ) to the film's longitudinal axis. The results indicate a J J Jc governed by the perpendicular component of the applied field as is sometimes observed in the layered high-temperature superconducting (HTS) thin films. These results also suggest that the peaks in the J J Jc0# occur when the vortex density coming from external sources becomes comparable to that induced internally from the self field of the transport current. A broad peak in the J J Jc when the field is incident perpendicular to the film surface is observed on the silicon substrate film but not on the sapphire substrate film. Possible reasons for this broad peak are discussed.

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