Anisotropy of spin polarization and spin accumulation in Si/Al<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>O<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>/ferromagnet tunnel devices

Sharma, Sandeep; Dash, Saroj P.; Saito, H.; Yuasa, Shinji; Wees, B. J. van; Jansen, R.

doi:10.1103/physrevb.86.165308

Cited by 22 publications

(37 citation statements)

References 27 publications

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“…When an external magnetic field is applied to the thin film in a vertical direction to measure the Hanle curve, a large error would be introduced if the magnetic thin film electrode in the vertical direction can be easily magnetized with high saturation magnetization intensity [20,21]. Although thin magnetic electrodes, e.g.…”

Section: Introductionmentioning

confidence: 99%

Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications

Lü

Huang

Wang

et al. 2015

Journal of Magnetism and Magnetic Materials

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Section: Introductionmentioning

confidence: 99%

Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications

Lü

Huang

Wang

et al. 2015

Journal of Magnetism and Magnetic Materials

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“…The effect can be used for experimentally proving and quantifying the interfacial SOC in metallic and metalsemiconductor systems. This is of particular relevance because the interfacial SOC is crucial for various modern phenomena in solids, e.g., anisotropies in optical [7] and magnetotransport phenomena such as the tunneling anisotropic magnetoresistance (TAMR) effect [8][9][10][11][12][13][14][15], as well as for the formation of Majorana fermions in ferromagnetic-atomic-chains-superconductor systems [16]. The interfacial SOC has also been proposed for controlling thermoelectric anisotropies in magnetic [17] and helimagnetic [18] tunnel junctions and for generating SOC-induced spin transfer torque in ferromagnet-normal-metal [19] and in topological-insulator-ferromagnet structures [20].…”

mentioning

confidence: 99%

Tunneling Anomalous and Spin Hall Effects

Matos-Abiague

Fabian

2015

Phys. Rev. Lett.

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We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems. The anomalous Hall effect (AHE) occurs in solids as the result of the interplay between spin-orbit coupling (SOC) and magnetism [1]. Although this fascinating phenomenon has been investigated for more than a century, its complexity and rich phenomenology continue to attract the attention of many researchers. The topic has been extensively discussed in various reviews [2][3][4][5].Most of the investigations of the AHE have been focused on the case of lateral transport in magnetic crystals and films. However, recent theoretical investigations explored the possible existence of anomalous Hall currents due to the side-jump and skew-scattering of spin-polarized electrons on impurities located in the insulating barrier of a ferromagnet-insulator-ferromagnet magnetic tunnel junction (MTJ) [6]. In this Letter we propose an effect which does not rely on scattering on impurities but on the interfacial SOC resulting from the lack of inversion symmetry of the MTJ. The effect can be used for experimentally proving and quantifying the interfacial SOC in metallic and metalsemiconductor systems. This is of particular relevance because the interfacial SOC is crucial for various modern phenomena in solids, e.g., anisotropies in optical [7] and magnetotransport phenomena such as the tunneling anisotropic magnetoresistance (TAMR) effect [8][9][10][11][12][13][14][15], as well as for the formation of Majorana fermions in ferromagnetic-atomic-chains-superconductor systems [16]. The interfacial SOC has also been proposed for controlling thermoelectric anisotropies in magnetic [17] and helimagnetic [18] tunnel junctions and for generating SOC-induced spin transfer torque in ferromagnet-normal-metal [19] and in topological-insulator-ferromagnet structures [20].We show theoretically that, when a current flows through a MTJ with a single ferromagnetic electrode, finite anomalous Hall conductances develop in the nonmagnetic counterelectrode, even in the absence of impurities. Since this effect originates from the skew tunneling [21...

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“…48 In magnetic tunnel contacts on silicon with an electrically created spin accumulation, anisotropy was also reported. 55,56 Since for purely electrical spin-transport the total voltage is given by V = R tun I + P G ∆µ/2 (see eqn. (4)), the anisotropy can arise from anisotropy of the tunnel resistance (i.e., from TAMR), or from anisotropy of the induced spin accumulation.…”

Section: Anisotropy Of the Seebeck Coefficientmentioning

confidence: 99%

Thermal creation of a spin current by Seebeck spin tunneling

Jansen

Breton²,

Deac

et al. 2013

Spintronics VI

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International audienceThe thermoelectric analog of spin-polarized tunneling, namely Seebeck spin tunneling, is a recently discovered phenomenon that arises from the spin-dependent Seebeck coefficient of a magnetic tunnel contact. In a tunnel junction with one ferromagnetic electrode and one non-magnetic electrode, a temperature difference between the two electrodes creates a spin current across the contact. Here, the basic principle and the observation of Seebeck spin tunneling are described. It is shown how it can be used to create a spin accumulation in silicon driven by a heat flow across a magnetic tunnel contact, without a charge tunnel current. The sign of the spin current depends on the direction of the heat flow, whereas its magnitude is anisotropic, i.e., dependent on the absolute orientation of the magnetization of the ferromagnet. The connection between Seebeck spin tunneling and the tunnel magneto-Seebeck effect, observed in metal magnetic tunnel junctions, is also clarified. Seebeck spin tunneling may be used to convert waste heat into useful thermal spin currents that aid or replace electrical spin current, and thereby improve the energy efficiency of spintronic devices and technologies. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only

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Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices

Cited by 22 publications

References 27 publications

Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications

Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications

Tunneling Anomalous and Spin Hall Effects

Thermal creation of a spin current by Seebeck spin tunneling

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