Anneal induced transformations of defects in hadron irradiated Si wafers and Schottky diodes

Gaubas, E.; Čeponis, T.; Deveikis, L.; Meškauskaite, D.; Pavlov, J.; Rumbauskas, Vytautas; Moll, M.; Ravotti, F.

doi:10.1016/j.mssp.2017.11.035

Cited by 9 publications

(9 citation statements)

References 17 publications

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“…Main defects introduced by the high energy neutrons are clusters [1], the concentration of which is proportional to fluence. They are the main recombination centres in Si irradiated with neutrons, protons and pions [5], also this shows that the contribution of point defects is very small in Si irradiated by neutrons. As the free carrier reciprocal lifetime linearly increases if the hadron fluence increases at least over six orders of magnitude, it shows the existence of recombination centres that rapidly capture electrons and holes.…”

Section: Introductionmentioning

confidence: 73%

“…It was confirmed by the linear dependence of contribution of scattering by clusters and dipoles, which was dominating in defining the mobility value. As proposed in [7], the dipoles could be the main recombination centres that provided the linear relation of fluence and lifetime [5]. The determined concentration of dipoles in the samples irradiated up to 1•10 16 neutrons/cm 3 permits evaluation of the free carrier recombination centre capture cross-section.…”

Section: Discussionmentioning

confidence: 90%

“…The electron mobility limited by cluster scattering without the dipole feature was evaluated by the relation [16] 1/µ = m*/e vS clus , (5) where v is the thermal velocity of electron, the crosssection of cluster scattering S clus = 10 -11 cm 2 and N clus is the cluster concentration. This term depends on temperature as T -1 .…”

Section: Methodsmentioning

confidence: 99%

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Electron mobility dependence on neutron irradiation fluence in heavily irradiated silicon

Mekys¹,

Vaitekonis²

2021

physics

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An increase of neutron irradiation fluence caused a decrease of Si radiation detector efficiency that was exceptionally well seen at 1017 neutron/cm2 fluence when the observed I–V characteristic of p-n junction under forward bias and under reverse bias became similar. Therefore the investigation of free carrier mobility could be a key experiment to understand the change of heavily irradiated silicon. The electron mobility was investigated by magnetoresistance means in microstrip silicon samples at temperature range T = 200–276 K. The analysis included the free carrier scattering by phonons, ionized impurities, dipoles and clusters and a contribution of each process was found by fitting the mobility dependence on temperature. The analysis of experimental data clearly demonstrated that the applied model did not explain the mobility in the samples irradiated to the highest fluence. Therefore a new concept of carrier transport is needed, and, as a conclusion, it could be stated that Si irradiated above 1016 cm–2 fluence (and up to 1020 cm–2) is a disordered material with the clusters.

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Section: Introductionmentioning

confidence: 73%

Section: Discussionmentioning

confidence: 90%

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Electron mobility dependence on neutron irradiation fluence in heavily irradiated silicon

Mekys¹,

Vaitekonis²

2021

physics

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“…Since these delayed events cannot be filtered out in the 90 Sr measurements, they contribute to the time resolution calculation and worsen the results. After irradiation, the charge carrier lifetime decreases due to deep energy levels accelerating the charge carrier recombination [26]. As a result, less charge from the slower component is able to reach the depleted region [27] and produce a delayed pixel response, thus essentially eliminating the delayed events in the bin distributions of the irradiated sample (figure 14(b)) and improving the time resolution.…”

Section: Time Resolution With 90 Srmentioning

confidence: 99%

Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and ⁹⁰Sr

Debevc,

Franks,

Hiti

et al. 2024

J. Inst.

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Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Backside- and Edge-TCT configurations, in addition to electrons from a 90Sr source. A sample irradiated to 5 · 1014 neq/cm2 was used to study the effect of radiation damage. Timing performance was evaluated for the entire pixel matrix and with positional sensitivity within individual pixels as a function of the deposited charge. Time resolution obtained with TCT is seen to be uniform throughout the pixel's central region with approx. 220 ps at 12 ke- of deposited charge, degrading at the edges and lower values of deposited charge. 90Sr measurements show a slightly worse time resolution as a result of delayed events coming from the peripheral areas of the pixel.

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“…The deep carrier traps affect the characteristics of the semiconductor particle detector [ 10 , 11 ]. Impurities, such as oxygen and carbon, play an important role in the formation of the irradiation-induced deep traps [ 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Study of Radiation-Induced Defects in p-Type Si1−xGex Diodes before and after Annealing

et al. 2020

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In this work, electrically active defects of pristine and 5.5 MeV electron irradiated p-type silicon–germanium (Si1−xGex)-based diodes were examined by combining regular capacitance deep-level transient spectroscopy (C-DLTS) and Laplace DLTS (L-DLTS) techniques. The p-type SiGe alloys with slightly different Ge contents were examined. It was deduced from C-DLTS and L-DLTS spectra that the carbon/oxygen-associated complexes prevailed in the pristine Si0.949Ge0.051 alloys. Irradiation with 5.5 MeV electrons led to a considerable change in the DLT spectrum containing up to seven spectral peaks due to the introduction of radiation defects. These defects were identified using activation energy values reported in the literature. The double interstitial and oxygen complexes and the vacancy, di-vacancy and tri-vacancy ascribed traps were revealed in the irradiated samples. The interstitial carbon and the metastable as well as stable forms of carbon–oxygen (CiOi* and CiOi) complexes were also identified for the electron-irradiated SiGe alloys. It was found that the unstable form of the carbon–oxygen complex became a stable complex in the irradiated and the subsequently annealed (at 125 °C) SiGe samples. The activation energy shifts in the radiation-induced deep traps to lower values were defined when increasing Ge content in the SiGe alloy.

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Anneal induced transformations of defects in hadron irradiated Si wafers and Schottky diodes

Cited by 9 publications

References 17 publications

Electron mobility dependence on neutron irradiation fluence in heavily irradiated silicon

Electron mobility dependence on neutron irradiation fluence in heavily irradiated silicon

Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and ⁹⁰Sr

Study of Radiation-Induced Defects in p-Type Si1−xGex Diodes before and after Annealing

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Anneal induced transformations of defects in hadron irradiated Si wafers and Schottky diodes

Cited by 9 publications

References 17 publications

Electron mobility dependence on neutron irradiation fluence in heavily irradiated silicon

Electron mobility dependence on neutron irradiation fluence in heavily irradiated silicon

Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and 90Sr

Study of Radiation-Induced Defects in p-Type Si1−xGex Diodes before and after Annealing

Contact Info

Product

Resources

About

Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and ⁹⁰Sr