2011
DOI: 10.1016/j.tsf.2011.04.202
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Annealing and recrystallization of amorphous ZnO thin films deposited under cryogenic conditions by pulsed laser deposition

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Cited by 33 publications
(16 citation statements)
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“…The values of the root mean square (RMS) surface roughness varied from 1.7 nm for 360 nmthick films to 8.2 nm for 2.8 lm-thick films, indicating that the films are very smooth. This is a direct consequence of the low Ar þ bombardment during deposition, but also of the room temperature sputtering as ZnO recrystallisation takes place at elevated temperatures 30 and such a process leads to an increase in grain sizes and hence to increased surface roughness. 31 Stress is a critical parameter that affects the functional properties of ZnO films thereby is a major obstacle in achieving thin film devices with controlled, efficient performance, [32][33][34] as well as making their fabrication difficult, since tensile or compressive stress can lead to cracking or buckling of the film, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The values of the root mean square (RMS) surface roughness varied from 1.7 nm for 360 nmthick films to 8.2 nm for 2.8 lm-thick films, indicating that the films are very smooth. This is a direct consequence of the low Ar þ bombardment during deposition, but also of the room temperature sputtering as ZnO recrystallisation takes place at elevated temperatures 30 and such a process leads to an increase in grain sizes and hence to increased surface roughness. 31 Stress is a critical parameter that affects the functional properties of ZnO films thereby is a major obstacle in achieving thin film devices with controlled, efficient performance, [32][33][34] as well as making their fabrication difficult, since tensile or compressive stress can lead to cracking or buckling of the film, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…As temperature increases from 2200 K, the variation of local structure is very similar to that of B4. Annealing experiments reported by Bruncko et al 52 found that the recrystallization of amorphous ZnO thin film begins to occur when annealing temperature becomes higher than about 473 K. The amorphous structure will transfer into a polycrystalline wurtzite phase with randomly oriented local crystal structures, proved by the corresponding XRD measurements. In our simulation, the recrystallization begins once the local crystal structures appear at temperatures higher than 500 K. The fraction of crystal structure gradually increases with temperature; however, the polycrystalline phase with grain boundaries is not found within the wurtzite structure obtained at 2200 K because the expensive computational cost for MD simulation limits our simulation system size to 2000 atoms.…”
Section: Resultsmentioning
confidence: 90%
“…Due to the 3-dimensional periodic boundary conditions are employed during the thermal elevating process, and there is no surface for oxygen atom desorption, the stoichiometry of Zn and O maintains 1 during the heating process. 52 Furthermore, in the simulation module, the annealing method is used in our simulation to obtain the ultimate atom position, velocity, and force; therefore, the temperature in the system is increased from 300 K to 3800 K with a rate of increase of 25 K per step, and then the temperature is maintained at every step for 3 ps. Finally, the MD simulation was performed to equilibrate the simulation system.…”
Section: Crystalmentioning
confidence: 99%
“…5(c), indicate that crystallinity of ZnO nanoparticles was developed by UV-laser annealing. Since the background broad peak indicates the existence of amorphous ZnO, as-deposited ZnO nanoparticles consisted of crystal and amorphous ZnO [11]. After UV-laser annealing, the background broad peak was decreased and full width half maximum of ZnO peaks became narrower.…”
Section: Fabrication Of Zno Nanocrystals By Uv-laser Annealing Of Znomentioning
confidence: 99%