Annealing behavior of Pd/<i>a</i>-Ge bilayer films

Wu, X. W.; Feng, Yuanming; Li, Boquan; Wu, Ziqin; Zhang, Shuyuan

doi:10.1063/1.356263

Cited by 16 publications

(13 citation statements)

References 10 publications

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“…66b). Moreover, unlike our previous studies of Pd/Ge or Ge/Pd bilayer films [237,238,240,295] fractal structure cannot be formed in Pd-Ge alloy thin films. The fractal formation of the a-Ge crystallization is restrained because the Pd-Ge interface chemical reaction was very fast, and the Pd, Ge composite rate was extremely large in co-evaporated Pd-Ge alloy thin films.…”

Section: Solid-state Reactions and Crystallization In Pd-ge Alloy Thicontrasting

confidence: 68%

“…The fractal formation of the a-Ge crystallization is restrained because the Pd-Ge interface chemical reaction was very fast, and the Pd, Ge composite rate was extremely large in co-evaporated Pd-Ge alloy thin films. Therefore, the fractal structure cannot be formed in Pd-Ge alloy thin films [237,238,240,295].…”

Section: Solid-state Reactions and Crystallization In Pd-ge Alloy Thimentioning

confidence: 98%

“…on the fractal formation of polycrystalline metal/amorphous semiconductor thin bilayer films has been extensively investigated in great depth [148,[236][237][238][239][240][241]. Considerable effort has been focused on the fractal crystallization of amorphous semiconductor in polycrystalline metal/amorphous semiconductor thin bilayer films after annealing, and the exploration of their microstructural evolution and the functional properties.…”

Section: Microstructural Evaluation Of Metal/semiconductor Thin Filmsmentioning

confidence: 99%

“…The solid-state phase transformation and a-Ge crystallization are mutually competitive in Pd-Ge alloy thin films [237,240]. The formation of the compounds (Pd 2 Ge and PdGe etc.)…”

Section: Processes Of Solid-state Reactions In Pd-ge Alloy Thin Filmsmentioning

confidence: 99%

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Microstructural evolution of oxides and semiconductor thin films

Chen

Jiao

et al. 2011

Progress in Materials Science

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Section: Solid-state Reactions and Crystallization In Pd-ge Alloy Thicontrasting

confidence: 68%

Section: Solid-state Reactions and Crystallization In Pd-ge Alloy Thimentioning

confidence: 98%

Section: Microstructural Evaluation Of Metal/semiconductor Thin Filmsmentioning

confidence: 99%

“…The solid-state phase transformation and a-Ge crystallization are mutually competitive in Pd-Ge alloy thin films [237,240]. The formation of the compounds (Pd 2 Ge and PdGe etc.)…”

Section: Processes Of Solid-state Reactions In Pd-ge Alloy Thin Filmsmentioning

confidence: 99%

See 2 more Smart Citations

Microstructural evolution of oxides and semiconductor thin films

Chen

Jiao

et al. 2011

Progress in Materials Science

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“…21 We deposited Ge at first and then Au without breaking the vacuum (about 2 Â 10 À5 Torr) by evaporating high-purity germanium (99.9%) and gold (99.99%) from two resistive-heated tungsten boats; viz., the bottom layer was amorphous Ge (a-Ge), and the top one was polycrystalline Au (p-Au). According to the evaporation equation…”

Section: Methodsmentioning

confidence: 99%

Controllable Growth and Unexpected Effects of Ge Nanocrystals

Chen

Pan

et al. 2011

J. Phys. Chem. C

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Being a smart material, nanoscale semiconductors have displayed properties unique to their small size in comparison with the normal bulk materials owing to the effect of quantum confinement on electronic and optical properties. There are potential applications in novel photonic devices. 1À4 For example, when the diameter of a Si nanowire is reduced to the order of magnitude of the electron's de Broglie wavelength, visible photoluminescence may be produced. Much attention has been paid to the investigation of group IV semiconductor nanocrystals, such as nanowires/nanorods and nanotubes, due to their contribution to the understanding of fundamental principles in mesoscopic physics, as well as the potential applications in optoelectronic devices. 5À7 Due to its advantageous semiconducting, optical, and chemical properties, germanium has many important fields of application, such as infrared detector devices, optical lens systems for infrared, fiber optics, electronic devices, and solar cells. 8 For example, Ge wafers have been used in the manufacture of solar cells, though there are other emerging applications which are starting to gather momentum, such as light-emitting diodes, photodetectors, and high electron mobility transistors, etc. 9 In recent years, semiconductor Ge and composites have also attracted much attention due to their broad application in many fields, such as microelectronic devices, one-dimensional quantum transistors, and light-emitting diodes. 10À12 Considerable effort has been focused on the

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