2023
DOI: 10.1007/s10971-023-06144-4
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Annealing edge sites of porous SnO2 nanoplates for selective NO2 sensing: a combined experimental and theoretical study

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Cited by 3 publications
(2 citation statements)
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“…For instance, Behera and Chandra reported a WO 3 nanorod-based NO 2 sensor; although it has a high response value, the operating temperature can reach up to 225 °C . Dong et al reported a porous SnO 2 nanoplate-based NO 2 sensor that operated at ambient temperature, while the detection limit was too high (1 ppm) for practical applications . Within the realm of MOS materials, ZnO is a significant N-type semiconductor with a broad bandgap (3.37 eV), substantial exciton binding energy (60 meV), outstanding electron mobility, and impressive thermal stability .…”
mentioning
confidence: 99%
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“…For instance, Behera and Chandra reported a WO 3 nanorod-based NO 2 sensor; although it has a high response value, the operating temperature can reach up to 225 °C . Dong et al reported a porous SnO 2 nanoplate-based NO 2 sensor that operated at ambient temperature, while the detection limit was too high (1 ppm) for practical applications . Within the realm of MOS materials, ZnO is a significant N-type semiconductor with a broad bandgap (3.37 eV), substantial exciton binding energy (60 meV), outstanding electron mobility, and impressive thermal stability .…”
mentioning
confidence: 99%
“…15 Dong et al reported a porous SnO 2 nanoplate-based NO 2 sensor that operated at ambient temperature, while the detection limit was too high (1 ppm) for practical applications. 16 Within the realm of MOS materials, ZnO is a significant N-type semiconductor with a broad bandgap (3.37 eV), substantial exciton binding energy (60 meV), outstanding electron mobility, and impressive thermal stability. 17 Despite its acceptable response value, the pristine MOS still has the disadvantages of insufficiently low detection limit, poor selectivity, and high operating temperature.…”
mentioning
confidence: 99%