2008
DOI: 10.4283/jmag.2008.13.3.097
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Annealing Effect on Exchange Bias in NiFe/FeMn/CoFe Trilayer Thin Films

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Cited by 9 publications
(6 citation statements)
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“…Such a reduction in H E in low-temperature annealing is a fairly common phenomenon. [12][13][14][15] The cause of this reduction might be a strain relief in the crystal structure or movement of impurities from the interior of grains to the grain boundaries. Both phenomena have an impact on the state of inter-layer interface, which, in turn, determines an exchange coupling across the interface between the FeNi and FeMn spins.…”
Section: Resultsmentioning
confidence: 99%
“…Such a reduction in H E in low-temperature annealing is a fairly common phenomenon. [12][13][14][15] The cause of this reduction might be a strain relief in the crystal structure or movement of impurities from the interior of grains to the grain boundaries. Both phenomena have an impact on the state of inter-layer interface, which, in turn, determines an exchange coupling across the interface between the FeNi and FeMn spins.…”
Section: Resultsmentioning
confidence: 99%
“…Details of a sample preparation can be found elsewhere. 20 The film thickness and growth texture were characterized by low-angle x-ray reflectivity and high-angle θ/2θ x-ray diffraction (not shown here).…”
Section: Methodsmentioning
confidence: 99%
“…In addition, 30-nm NiFe/15-nm FeMn and 15-nm FeMn/30-nm CoFe bilayers and 30-nm NiFe and 30-nm CoFe single layers were prepared for comparison with the trilayers. The sample preparation has already been described elsewhere [19]. A magnetic field of 300 Oe was applied along the sample plane during deposition to induce the exchange anisotropy.…”
Section: Methodsmentioning
confidence: 99%