Annealing effect on surface passivation of a-Si:H/c-Si interface in terms of crystalline volume fraction

Yang, Hyun Jin; Ji, Kwang-Sun; Choi, Ji Il; Lee, Heon Min

doi:10.1016/j.cap.2010.02.055

Cited by 18 publications

(10 citation statements)

References 5 publications

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“…Decrease of the bandgap in films, when subjected to annealing above 300 • C, shows the optimum shift. This optimum shift can also be explained based on the formation of nano-clusters of Si-Se [43].…”

Section: Resultsmentioning

confidence: 96%

“…The effect of the composition and annealing on the optical properties of Se or S-doped a-Si:H should be considered when evaluating their operational characteristics. Thermal annealing has been found to reverse many of the lightinduced features in the infrared absorption spectrum of a-Si:H. Annealing studies have emerged as an important tool that provide insight into the various material properties, especially in a-Si:H [43], a-Si,C:H [44], amorphous silicon-rich nitride films [45], etc. Annealing conditions and dopant concentrations influence optical constants of semiconductor thin films.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical properties of Se or S-doped hydrogenated amorphous silicon thin films with annealing temperature and dopant concentration

Sharma

Gupta

Purohit

et al. 2011

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Optical properties of Se or S-doped hydrogenated amorphous silicon thin films with annealing temperature and dopant concentration

Sharma

Gupta

Purohit

et al. 2011

Journal of Alloys and Compounds

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“…But the carrier lifetime is drastically changed, from 502 ls before to 1621 ls after annealing, implying the increase of carrier lifetime exceeds 300 %. This also demonstrated that the annealed film is almost completely amorphous state [18]. In order to make further contrast, films with the same thickness are deposited using a silane concentration of 50 %.…”

Section: Resultsmentioning

confidence: 99%

Annealing induced amorphous/crystalline silicon interface passivation by hydrogen atom diffusion

Dai

Cai

Zhang

et al. 2015

J Mater Sci: Mater Electron

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Post-annealing is an efficient method to improve passivation quality of the amorphous/crystalline silicon configuration and it's been widely used in fabrication of amorphous/crystalline silicon heterojunction solar cells. In this study, hydrogenated amorphous silicon thin films are deposited on n type monocrystalline silicon, using a single chamber radio-frequency plasma-enhanced chemical vapor deposition system. After passivation the best result with effective minority carrier lifetime (s eff ) exceeding 1600 ls is achieved. Fourier transform infrared spectrum is utilized to investigate the structure evolution after annealing. The result shows that, the improved passivation quality is attributed to interface dangling bonds saturated by H atoms diffusion during annealing, the reason of passivation quality affected by annealing and film thickness is also proposed.

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“…Chemical passivation is based on the reduction in the number of defect states at the interface. The different passivation quality of the solar cell was observed as different atoms combine with the dangling bonds [2][3][4][5][6]. Field-effect passivation is based on the driving minority carrier from the surface layer to the solar cells by means of building electric field on the surface.…”

Section: Introductionmentioning

confidence: 99%

Investigation of single field-effect surface passivation by constructing electrolyte/Si solar cell structure

Liu

Guan

Bian

et al. 2012

2012 International Conference on Optoelectronics and Microelectronics

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The electrolyte/Si solar cell structure is proposed to investigate single field-effect surface passivation. The electrolyteinduced extra electrostatic field under the surface of Si solar cell can be controlled by adjusting voltages between the electrolyte and the surfaces of Si solar cell. Under positive gate voltages, an electron accumulation layer was formed under the electrolyte/Si interface leading to surface passivation of Si solar cell. Our results indicate that the proposed electrolyte/Si solar cell structure made it feasible to investigate single field-effect surface passivation because other interference factor could be eliminated, such as interfacial stress, surface defects and inter diffusion. With single field-effect surface passivation scheme, an increment in short-circuit current of Si solar cell from 6.1 mA to 6.37 mA was achieved.

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Annealing effect on surface passivation of a-Si:H/c-Si interface in terms of crystalline volume fraction

Cited by 18 publications

References 5 publications

Optical properties of Se or S-doped hydrogenated amorphous silicon thin films with annealing temperature and dopant concentration

Optical properties of Se or S-doped hydrogenated amorphous silicon thin films with annealing temperature and dopant concentration

Annealing induced amorphous/crystalline silicon interface passivation by hydrogen atom diffusion

Investigation of single field-effect surface passivation by constructing electrolyte/Si solar cell structure

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