Annealing effect on surfaces of 4H(6H)SiC(0001)Si face

Tsukamoto, Takeshi; Hirai, Masaaki; Kusaka, M.; Iwami, M.; Ozawa, Takehiro; Nagamura, Toshihiko; Nakata, Takao

doi:10.1016/s0169-4332(96)00903-8

Cited by 20 publications

(12 citation statements)

References 9 publications

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“…The atomic spacing ͑in the direction ox͒ of the ͑1 ϫ 1͒ C is 3.11 Å in good agreement with the atomic displacement in the bulk lattice of 4H-SiC ͑0001͒, which is 3.09 Å. 10 The ͑1 ϫ 1͒ graphitic reconstruction displayed in Fig. 6͑b͒, has an atomic spacing ͑in the direction ox͒ of 2.5 Å, very close to the atomic displacement of graphite ͑2.46 Å͒.…”

Section: Annealing At 1000°csupporting

confidence: 70%

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Investigation of annealing effects on the adsorption of Ni on 4H–SiC (0001) surfaces using scanning tunneling microscopy and spectroscopy

Blackwood

Teng

Maffeïs

et al. 2005

Journal of Applied Physics

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The adsorption of Ni on 4H-SiC surfaces as a function of temperature has been investigated using scanning tunneling microscopy (STM) and variable tip-sample separation scanning tunneling spectroscopy (VTSS-STS). A submonolayer of Ni was deposited on an atomically clean (√3×√3) 4H-SiC sample, which was then annealed sequentially from 400to1000°C. VTSS-STS showed a reduction in the apparent surface band gap after Ni deposition, attributed to metal induced gap states. The size of the Ni clusters changed after annealing, due to the formation of Ni-silicides and diffusion. The surface band bending on Ni clusters increased upon annealing to 500°C, in good agreement with Schottky contact formation models. After annealing at 1000°C for 3min, various surface reconstructions were observed with STM, which are typical of graphite. Ni-silicide clusters also diffused into the SiC and some could still be observed below the graphite surface. VTSS-STS measurements of the graphite surface above diffused clusters displayed Ohmic behavior.

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Section: Annealing At 1000°csupporting

confidence: 70%

“…Different phases of Ni-silicide have been reported at various temperatures. [4][5][6][7][8][9][10][11][12] As the annealing temperature increases the concentration of Si in the Ni-silicide phases also increases.…”

Section: Introductionmentioning

confidence: 99%

Investigation of annealing effects on the adsorption of Ni on 4H–SiC (0001) surfaces using scanning tunneling microscopy and spectroscopy

Blackwood

Teng

Maffeïs

et al. 2005

Journal of Applied Physics

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“…Since the discovery of the ͑6 ͱ 3 ϫ 6 ͱ 3͒R30 LEED pattern, it has been suggested that it is a moiré pattern due to the near commensuration of graphene with SiC. 10,25,26 Early STM experiments supported this claim because they imaged a 6 ϫ 6 reconstruction [24][25][26]58,64 instead of the ͑6 ͱ 3 ϫ 6 ͱ 3͒R30 pattern observed in LEED. More recent STM experiments, on the other hand, have directly imaged the ͑6 ͱ 3 ϫ 6 ͱ 3͒R30 structure and shown that the graphene has a vertical modulation with this lateral periodicity.…”

Section: Discussionmentioning

confidence: 99%

Interface structure of epitaxial graphene grown on 4H-SiC(0001)

et al. 2008

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We present a structural analysis of the graphene-4HSiC͑0001͒ interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer ͑ϳ1.7 Å compared to 0.63 Å͒. The distance from this interface layer to the first graphene sheet is much smaller than the graphite interlayer spacing but larger than the same distance measured for graphene grown on the ͑0001͒ surface, as predicted previously by ab initio calculations.

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“…The 4H or 6H stacking sequences were used because these polytypes are commercially available and have been used as substrates for electronic device fabrication. [31][32][33][34][35][36][37][38] In this study, ultraviolet photoemission spectra of the valence band are obtained after different stages of the interface formation process. The reconstructions that have been observed for the Si surface of hexagonal SiC are 1ϫ1, 3ϫ3, ͱ 3ϫͱ3, and 6ͱ3ϫ6ͱ3.…”

Section: Introductionmentioning

confidence: 99%

Photoemission of the SiO2–SiC heterointerface

O’Brien

Koitzsch

Nemanich

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Photoelectron spectroscopy has been performed on SiC surfaces to investigate the valence band characteristics during SiO2 formation. Various stages of the oxide development were investigated. The √3×√3R30° surface is used as the initial surface for the oxidation experiments. The substrates were exposed to a succession of a 30 s oxygen exposure, two 30 s oxygen plasmas, and finally, a plasma-enhanced chemical vapor deposition SiO2 deposition. Ultraviolet photoemission spectroscopy was employed to measure the valence band discontinuity for the oxide on n-type 6H and n-type 4H SiC substrates for each step in the oxidation process. X-ray photoemission spectroscopy was used to confirm the valence band offset. The valence band discontinuity was determined to be 2.0 eV. Furthermore, the location of the valence band maximum of the SiC to the conduction band minimum of the SiO2 is determined to be a constant (∼7.0 eV) between 6H and 4H SiC. Band bending effects are directly measured from ultraviolet photoemission spectroscopy (UPS) and x-ray photoemission spectroscopy. From the UPS measurements of the band bending effects, the interface state density is determined to be ∼5×1012 cm−2.

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Annealing effect on surfaces of 4H(6H)SiC(0001)Si face

Cited by 20 publications

References 9 publications

Investigation of annealing effects on the adsorption of Ni on 4H–SiC (0001) surfaces using scanning tunneling microscopy and spectroscopy

Investigation of annealing effects on the adsorption of Ni on 4H–SiC (0001) surfaces using scanning tunneling microscopy and spectroscopy

Interface structure of epitaxial graphene grown on 4H-SiC(0001)

Photoemission of the SiO2–SiC heterointerface

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