Abstract:Crystalline Dy oxide thin films prepared on Si(p) substrates were annealed in vacuum and air at different temperatures and investigated by x-ray diffraction (XRD). Their capacitance-gate voltage characteristics were used to determine the charge densities in the samples and the voltage drop across the oxide layer itself in terms of gate voltage. The surface charge density was device-grade, on the order of 10 11 cm ÿ2 . The dc current-voltage characteristic measurements show that the main mechanism controlling t… Show more
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