Annealing effect on the electrical proprieties of IF(CN2)2-meta based OTFTs: Thermal behavior and modeling of charge transport

Abstract

Annealing effect on the electrical proprieties of IF(CN 2) 2-meta based OTFTs: thermal behavior and modeling of charge transport

Dihydroindenofluorenes as building units in organic semiconductors for organic electronics

“…The annealing effect on the electrical properties of [2,1- b ]-105 was more precisely studied by characterizing the devices at different temperatures from 300 to 380 K, allowing us to evaluate the activation energy of the mobility ( E a ) and the density of states DOS. 100 After annealing treatment, a reduction of E a was observed. Defects at the electrodes/organic semiconductor interface, accelerating the charge injection in the active layer, have been involved in this decrease.…”

“…The dicyanovinylene is currently a widely used fragment in efficient n-type OFET. 78,[99][100][101][102][103] Top contact FETs (OFET52-60) were fabricated by either vacuum deposition or spin-coating on octadecyltrichlorosilane (OTS)-treated SiO 2 /p + -Si substrates. No-gate effect was observed for OFET52 based on 3).…”