Annealing effect on the near-band edge emission of ZnO

Khomyak, V. V.; Slyotov, M. M.; Shtepliuk, Ivan; Lashkarev, G. V.; Slyotov, A. M.; Марьянчук, П. Д.; Kosolovskiy, V. V.

doi:10.1016/j.jpcs.2012.10.001

Cited by 30 publications

(24 citation statements)

References 45 publications

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“…Our values for ZnO and ZnS are in good agreement with known literature data [3,5,27,28]. This is also confirmed by our recent studies of band structure parameters of ZnO using high-sensitive modulation spectroscopy [3,29]. The parameters Eg, Δso і Δcr, which are 3.30 eV, 5 і 49 meV respectively, are consistent with other published data [27,30].…”

supporting

confidence: 92%

“…Such a behavior is typical for many other alloys based on A II B VI compounds [26], including the ZnO1-xSx [11]. Our values for ZnO and ZnS are in good agreement with known literature data [3,5,27,28]. This is also confirmed by our recent studies of band structure parameters of ZnO using high-sensitive modulation spectroscopy [3,29].…”

supporting

confidence: 92%

“…(~ 60 and 40 meV, respectively), which can provide an efficient UV emission at room and higher temperatures [3]. Furthermore, much attention is recently paid to the possibility of using thin layers of these materials for replacement of highly toxic CdS, which is commonly used today for buffer layers in fabrication of Cu(In,Ga)Se2-based heterojucntion photovoltaic cells with efficiency as high as 20 % [4].…”

mentioning

confidence: 99%

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Band-gap engineering of ZnO1−xSx films grown by rf magnetron sputtering of ZnS target

Khomyak

Shtepliuk

Khranovskyy

et al. 2015

Vacuum

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supporting

confidence: 92%

supporting

confidence: 92%

mentioning

confidence: 99%

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Band-gap engineering of ZnO1−xSx films grown by rf magnetron sputtering of ZnS target

Khomyak

Shtepliuk

Khranovskyy

et al. 2015

Vacuum

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“…Due to the Cd and Zn ionic radii -0.97 Å in comparison to 0.74 Å, when Cd substitutes Zn in his lattice sites, both a and c lattice parameters are enlarged. For the hexagonal lattice the position of the (002) reflection is directly related to the c-lattice parameter via the diffraction angle as following [34]:…”

Section: Resultsmentioning

confidence: 99%

Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method

Shtepliuk

Khranovskyy

Lashkarev

et al. 2013

Applied Surface Science

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Investigation of Cd behavior in the ZnCdO alloys, where Cd content exceeds the solubility limit, is of importance due to possible impurity segregation and second phases' formation in this material. We have studied the Cd behavior in the Zn1-xCdxO films deposited by dc magnetron sputtering on different substrates: c-plane Al2O3, bare Si (1 0 0) and Au (45 nm)/Si (1 0 0). It is revealed that Cd content of 10 at. % in the target results in average 6-8 at. % of Cd in the films, depending on the substrate type. Structural analysis based on X-ray diffraction revealed the absence of Cd-related secondary phases. Time-resolved photoluminescence (TRPL) and high-resolution energy dispersive X-ray analysis (EDX) help to understand the recombination dynamics of spontaneous emission and to establish correlations between cadmium content and radiative lifetime. We have revealed that the internal quantum efficiency is influenced by the Cd content and defect concentration. It is suggested that increasing of the cadmium content results in the reduction of nonradiative recombination centers originating from point defects

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“…In the past, researchers have attempted many methods aimed at deecting passivation, such as UV-ozone treatment, 10,11,13 atomic doping, 9,[16][17][18]23 surface modication, 19,20 and annealing treatments, 21 etc. The electrical conductivity of the ZnONFs has been signicantly improved by suppressing the V O defects.…”

Section: Introductionmentioning

confidence: 99%

Effect of UV-ozone process on the ZnO interlayer in the inverted organic solar cells

Qin

Zhang

et al. 2017

RSC Adv.

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ZnO interlayer is crucial for the performance of inverted organic solar cells (IOSCs). Herein, we investigate the effects of short UV-ozone treatment of ZnO nanofilms (ZnONFs) on the performance of IOSCs with a structure of ITO/ZnONFs/P3HT:PCBM/MoO 3 /Ag. There is a 17.59% and 32.60% increase in the short circuit current and power conversion efficiency, respectively, after the treatment of the device for 20 seconds. Furthermore, the optimized device showed excellent stability under ambient conditions for more than four weeks without encapsulation. We conclude that the UV-ozone treatment oxidizes oxygen vacancy defects of ZnONFs, thereby decreasing the internal resistance and improving charge transfer at the ZnONFs/polymer interface. However, a longer treatment time will produce oxygen interstitial defects, which dramatically increases the work functions of ZnONFs and deteriorates the contact between ZnONFs and the active layer. As a result, the process of charge transfer will be blocked, resulting in a sharp drop in the performances of IOSCs.

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Annealing effect on the near-band edge emission of ZnO

Cited by 30 publications

References 45 publications

Band-gap engineering of ZnO1−xSx films grown by rf magnetron sputtering of ZnS target

Band-gap engineering of ZnO1−xSx films grown by rf magnetron sputtering of ZnS target

Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method

Effect of UV-ozone process on the ZnO interlayer in the inverted organic solar cells

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