Annealing Effects of ZnO Nanorods on DC Inorganic Electroluminescent Device Characteristics

Abstract

We fabricated a DC inorganic electroluminescent (EL) device whose structure is ITO electrode / ZnS:Mn / ZnO (Mn) nanorods / p−/p++-Si(111) / Au electrode. ZnO nanorods were grown by chemical vapor deposition method combined with laser ablation. ZnS:Mn and ITO were deposited by electron-beam-deposition. We studied on annealing effects of ZnO nanorods on the electrical and electroluminescent characteristics of this device. The device without annealing showed a low breakdown voltage, and any EL emission could not be observed. On the other hand, the device with annealing showed higher impedance and higher breakdown voltage, and the EL emission from the ZnS:Mn layer was observed. An intense EL emission was observed from a peripheral of ITO electrode. An EL emission from the inside area of ITO electrode was very weak.