Annealing effects on defect levels of CdTe:Cl materials and the uniformity of the electrical properties

Ayoub, M.; Hage‐Ali, M.; Koebel, J.M.; Zumbiehl, A.; Klotz, F.; Rit, C.; Regal, R.; Fougères, P.; Siffert, P.

doi:10.1109/tns.2003.809981

Cited by 45 publications

(34 citation statements)

References 23 publications

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“…As clearly described in [26], generally the conventional polarization model used in [8,11,15,[27][28][29] assumes that the bias voltage develops across all the detector thickness L. In [26], the authors suppose that almost all the bias voltage develops across the depletion width W. In our case, as we will show in the transient measurements, the formation of the dead layer occurs within the first few seconds after the bias of the detector.…”

Section: Al/cdte Barrier Heightmentioning

confidence: 83%

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Electrical characterization of CdTe pixel detectors with Al Schottky anode

Turturici

Abbene

Gerardi

et al. 2014

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tPixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4 Â 4) pixelated Schottky Al/p-CdTe/Pt detector. Current-voltage (I-V) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe contact was estimated by using the thermionic-field emission model at low reverse bias voltages. Activation energy of the deep levels was measured through the analysis of the reverse current transients at different temperatures. Finally, we employed an analytical method to determine the density and the energy distribution of the traps from SCLC current-voltage characteristics.

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Section: Al/cdte Barrier Heightmentioning

confidence: 83%

“…Deep levels with energies in the range 0.6-0.8 eV in CdTe were found by several groups and were evaluated by different methods [11,28,29,[31][32][33][34]. These energy levels are often attributed to acceptor levels responsible for polarization which might depend on the thermal treatment during the crystal growth [35].…”

Section: Transients Of the Reverse Currentmentioning

confidence: 99%

Electrical characterization of CdTe pixel detectors with Al Schottky anode

Turturici

Abbene

Gerardi

et al. 2014

Nuclear Instruments and Methods in Physics Research Section A:

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“…In the c-and X-ray detectors research work based on insulating and semi-insulating CdTe, it is well known that Te precipitation is common in CdTe material, irrespective of the growth technique [22][23][24][25][26]. It is also known that treatment similar to CdCl 2 , removes these precipitated Te [27].…”

Section: Discussionmentioning

confidence: 99%

Improvement of composition of CdTe thin films during heat treatment in the presence of CdCl2

Dharmadasa

Echendu

Fauzi

et al. 2016

J Mater Sci: Mater Electron

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CdCl 2 treatment is a crucial step in development of CdS/CdTe solar cells. Although this processing step has been used over a period of three decades, full understanding is not yet achieved. This paper reports the experimental evidence for improvement of composition of CdTe layers during CdCl 2 treatment. This investigation makes use of four selected analytical techniques; Photoelectro-chemical (PEC) cell, X-ray diffraction (XRD), Raman spectroscopy and Scanning electron microscopy (SEM). CdTe layers used were electroplated using three Cd precursors; CdSO 4 , Cd(NO 3 ) 2 and CdCl 2 . Results show the improvement of stoichiometry of CdTe layers during CdCl 2 treatment through chemical reaction between Cd from CdCl 2 and elemental Te that usually precipitate during CdTe growth, due to its natural behaviour. XRD and SEM results show that the low-temperature (*85°C) electroplated CdTe layers consist of *(20-60) nm size crystallites, but after CdCl 2 treatment, the layers show drastic recrystallisation with grains becoming a few microns in size. These CdCl 2 treated layers are then comparable to high temperature grown CdTe layers by the size of grains.

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“…Review of a large body of CdTe growth techniques reveals that Te precipitation in CdTe is a common issue [40][41][42]. Even melt-growth technique for growing bulk CdTe, show severe precipitation of Te in CdTe crystals.…”

Section: Te Precipitation In Cdtementioning

confidence: 99%

Review of the CdCl2 Treatment Used in CdS/CdTe Thin Film Solar Cell Development and New Evidence towards Improved Understanding

2014

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Cadmium chloride treatment is a key processing step identified in the late 1970s to drastically improve the solar to electric conversion efficiency of CdS/CdTe thin film solar cells. Although a large body of experimental results are available to date, this process is yet to be understood even after three decades of research. This paper reviews the experimental results available, presents some new clues leading to improved understanding and suggests key research areas necessary to fully understand this crucial processing step. Improved understanding will lead to further increase in conversion efficiency of CdS/CdTe solar cells well beyond 20%.

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Annealing effects on defect levels of CdTe:Cl materials and the uniformity of the electrical properties

Cited by 45 publications

References 23 publications

Electrical characterization of CdTe pixel detectors with Al Schottky anode

Electrical characterization of CdTe pixel detectors with Al Schottky anode

Improvement of composition of CdTe thin films during heat treatment in the presence of CdCl2

Review of the CdCl2 Treatment Used in CdS/CdTe Thin Film Solar Cell Development and New Evidence towards Improved Understanding

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