Annealing experiments in heavily arsenic-doped (Hg,Cd)Te

Vydyanath, H. R.; Lichtmann, L.S.; Sivananthan, S.; Wijewarnasuriya, P. S.; Faurie, J. P.

doi:10.1007/bf02657971

Cited by 24 publications

(10 citation statements)

References 23 publications

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“…According to [2] As is expected to be an acceptor when in an interstitial site or when substitutional at a Te site and to be a donor when substituting at a cation site. Based on annealing experiments of MBE layers, with x Cd between 0.21 and 0.23, and containing total As concentrations, [As], up to 1 × 10 20 cm −3 , it was concluded that for [As] below 5 × 10 18 cm −3 the only defects of any significance at moderate to high Hg pressures were the acceptors As i and As Te [4]. At larger [As] the paired defect (As i As Hg ) which was assumed to occur in both singly ionized donor and acceptor states becomes increasingly important.…”

Section: Introductionmentioning

confidence: 99%

The incorporation and diffusivity of As in Hg_0.8Cd_0.2Te

Shaw

2000

Semicond. Sci. Technol.

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The dependence to be expected by the experimentally observed diffusivity of As in Hg 0.8 Cd 0.2 Te, D(As), on the Hg pressure, P Hg , and on the As concentration has been calculated for various modes of As incorporation described in the literature and for interstitial and vacancy diffusion mechanisms. Comparison with experimental data which shows D(As) to be independent of As concentration (at least up to 5 × 10 18 cm −3 ), to vary as 1/P Hg at moderate pressures and as 1/P 3 Hg at high pressures, confirms that these features can only be accounted for if As substitutes on the cation sub-lattice as As • Hg and on the anion sub-lattice as As Te . Diffusion occurs on the cation sub-lattice due to the mobile As • Hg diffusing by a vacancy mechanism. Significant concentrations of As dimer or tetramer complexes give rise to D(As) depending on the As concentration as well as incorrect variations with P Hg . A further important result is that Hg 0.8 Cd 0.2 Te is electrically intrinsic for these As concentrations down to at least 250 • C.

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Section: Introductionmentioning

confidence: 99%

The incorporation and diffusivity of As in Hg_0.8Cd_0.2Te

Shaw

2000

Semicond. Sci. Technol.

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“…[4][5][6] If activation anneals are performed at temperatures much above the growth temperature, the advantages of the low growth temperature of MBE are reduced. Although models of the amphoteric behavior have been suggested, 7,8 there has been no general consensus on the microscopic mechanism of group V element incorporation both in LPE and MBE material. Arsenic is the group V element that has received the most attention in the past few years, and for that reason, we focus our attention on it.…”

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confidence: 99%

Amphoteric behavior of arsenic in HgCdTe

Berding

Sher

1999

Applied Physics Letters

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The properties of arsenic in HgCdTe are predicted using ab initio calculations and a statistical theory. Predictions on the amphoteric nature of arsenic are in good agreement with experimental results on material growth both by liquid phase epitaxy and molecular beam epitaxy (MBE). The experimentally observed dependence of the arsenic diffusion on mercury partial pressure is also explained by our results. A microscopic model for activating the arsenic as an acceptor is suggested, and requirements of post-MBE-growth activation anneals are identified.

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“…7,8 Our model for the activation process involves only the primary defects in the lattice. We predict that arsenic interstitial densities are negligible and the activation model that we propose does not depend on arsenic interstitials being present in the lattice.…”

Section: Discussionmentioning

confidence: 99%

“…2,6 The amphoteric behavior for arsenic has been seen in materials grown by all of these approaches, 7 with incorporation as a p-type dopant under Hg-rich conditions, and as an n-type dopant or inactive under Te-rich conditions. 8 In this paper, we present the results of a theoretical examination of the behavior of arsenic atoms in x = 0.3 Hg 1-x Cd x Te. 8 In this paper, we present the results of a theoretical examination of the behavior of arsenic atoms in x = 0.3 Hg 1-x Cd x Te.…”

Section: Introductionmentioning

confidence: 99%