Annealing-free adhesive electroless deposition of a nickel/phosphorous layer on a silane-compound-modified Si wafer

Wei, Tzu‐Chien; Pan, Tseng-Chieh; Chen, Chih‐Ming; Lai, Kuei-Chang; Wu, Congyi

doi:10.1016/j.elecom.2015.02.009

Cited by 20 publications

(13 citation statements)

References 21 publications

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“…The principle of ELP involves a reduction of metal ions from the depositing bath to the substrate, which typically requires a catalyst such as palladium to lower the activation energy for metal nucleation. Because ELP occurs on the active sites of the catalysts, the adhesion of the deposited film, which is an important index for the reliability of the whole circuity, is highly related to the interaction between catalysts and the substrate 6 – 10 . In the past, adequate adhesion is obtained by either mechanically 11 or chemically 11 – 13 roughing the substrate before ELP so that the catalysts and the subsequent metal film can be firmly anchored.…”

Section: Introductionmentioning

confidence: 99%

“…The above work proved that a strong donor-acceptor interaction exists between the Pd core of PVA-Pd and amino-moiety of ETAS. Lacking such strong interaction, commercial Sn/Pd catalysts fail to anchor on the ETAS-modified Si surface firmly and exhibit poor adhesion in subsequent ELP Ni-P film 10 . However, in our previous study, and according to our review of all relevant literature, the relation between ETAS modification and the adhesion of ELP film has never been explored.…”

Section: Introductionmentioning

confidence: 99%

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Manipulating the adhesion of electroless nickel-phosphorus film on silicon wafers by silane compound modification and rapid thermal annealing

Hsu

Wang

et al. 2017

Sci Rep

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In this study, the effect of 3-2-(2-aminoethylamino) ethylamino propyl trimethoxysilane (ETAS) modification and post rapid thermal annealing (RTA) treatment on the adhesion of electroless plated nickel-phosphorus (ELP Ni-P) film on polyvinyl alcohol-capped palladium nanoclusters (PVA-Pd) catalyzed silicon wafers is systematically investigated. Characterized by pull-off adhesion, atomic force microscopy, X-ray spectroscopy and water contact angle, a time-dependent, three-staged ETAS grafting mechanism including islandish grafting, a self-assembly monolayer (SAM) and multi-layer grafting is proposed and this mechanism is well correlated to the pull-off adhesion of ELP Ni-P film. In the absence of RTA, the highest ELP Ni-P film adhesion occurs when ETAS modification approaches SAM, where insufficient or multi-layer ETAS grafting fails to provide satisfactory results. On the other hand, if RTA is applied, the best ELP Ni-P film adhesion happens when ETAS modification is islandish owing to the formation of nickel silicide, where SAM or multi-layer ETAS modification cannot provide satisfactory adhesion because the interaction between ETAS and PVA-Pd has been sabotaged during RTA. Evidenced by microstructural images, we also confirmed that ETAS can act as an efficient barrier layer for nickel diffusion to bulk silicon.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Manipulating the adhesion of electroless nickel-phosphorus film on silicon wafers by silane compound modification and rapid thermal annealing

Hsu

Wang

et al. 2017

Sci Rep

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“…Nuclei are firstly bonded to the substrate surface. In initial nucleation stage, nucleation rate of Ni were insufficient, which could cause a weak adhesion between the Ni-P layer and Si substrate (Wei et al 2015). Lack of attachment areas and sites on the Si wafer caused the Ni-P layer to peel off easily.…”

Section: Discussionmentioning

confidence: 99%

“…However, the film had a delamination phenomenon. The adhesion of the electroless deposits to the substrate is primarily mechanical in nature (Wei et al 2015). In the study, electroless Ni-P films were plated on Si substrates.…”

Section: Substratementioning

confidence: 99%

Effect of plating temperature on electroless amorphous Ni–P film on Si wafers in an alkaline bath solution

Jiang

2017

Appl Nanosci

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Nickel-phosphorus (Ni-P) film was deposited by electroless process on the surface of p-type polycrystalline silicon at the temperature of 60-80°C and pH value of 10.0. The effect of plating temperature on morphology, crystallographic structure, chemical composition and deposition rate of Ni-P film was studied. Microstructure and morphology of surface and cross section of the film were examined by a scanning electron microscopy and optical microscopy. The crystallographic structure and chemical composition of the film were determined by X-ray diffraction and energy dispersive spectroscopy, respectively. The results show that electroless Ni-P films were composed of the amorphous phase. The stable value P-content of the film was maintained at about 12 wt% with increasing bath temperature. The film surface was dense, and no cracking was found at 60 and 80°C. However, the film deposited at 70 and 80°C had a poor adherence to the substrate with evidence of delamination. The deposition rate of the film was increased with increasing plating temperature. At the same time, the deposition mechanism of the film on silicon substrate in the alkaline bath solution was addressed.

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“…A facile method has been recently developed to grow a Ni layer onto a Si substrate other than vacuum-based deposition method [3]. Prior to Ni deposition, the Si surface was firstly modified by coating a silane-compound…”

Section: Introductionmentioning

confidence: 99%

Front-side metallization of silane-compoundmodified Si by electroless deposition of Ni(P) and interfacial characterizations

Lai

Wei

et al. 2016

2016 International Conference on Electronics Packaging (ICEP)

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Front-side metallization techniques for nonconductive substrates receives numerous attention due to their practical application importance in the microelectronic and solar cell industries. Electroless deposition of Ni(P) with the help of catalyst such as Sn/Pd colloids is a common method to deposit a metallic film on non-conductive substrates. However, weak physical adsorption of the Sn/Pd colloids on the substrate may influence the adhesion strength of the Ni(P) film. Besides, employment of the Sn/Pd colloids involves an acceleration step (using acid solution to remove the Sn ion shell) which inevitably increases the complexity of the activation process. In this study, we demonstrated a promising method to fabricate an adhesive Ni(P) film on a textured Si substrate by using polyvinylpyrrolidone-capped Pd nanoclusters (PVP-nPd) as the catalyst and a silane compound layer as an agglutinant to bridge with the Pd cores in the PVP-nPd clusters. An improved adhesion strength of the Ni(P) film on Si is obtained even without postannealing treatment which shows high potentials in the applications of temperature-sensitive substrates. For potential application in the Si-based solar cells, post-annealing treatment was conducted to form the Ni silicides at the Ni(P)/Si interface.The experimental results indicated that the cleaning process of Si surface prior to the Ni(P) film deposition was crucial for the film uniformity and stability against the thermal annealing treatment.

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Annealing-free adhesive electroless deposition of a nickel/phosphorous layer on a silane-compound-modified Si wafer

Cited by 20 publications

References 21 publications

Manipulating the adhesion of electroless nickel-phosphorus film on silicon wafers by silane compound modification and rapid thermal annealing

Manipulating the adhesion of electroless nickel-phosphorus film on silicon wafers by silane compound modification and rapid thermal annealing

Effect of plating temperature on electroless amorphous Ni–P film on Si wafers in an alkaline bath solution

Front-side metallization of silane-compoundmodified Si by electroless deposition of Ni(P) and interfacial characterizations

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