Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure

Abstract

We study the effects of annealing on (Ga0.64,In0.36) (N0.045,As0.955) using hard X-ray photoelectron spectroscopy and X-ray absorption fine structure measurements. We observed surface oxidation and termination of the N-As bond defects caused by the annealing process. Specifically, we observed a characteristic chemical shift towards lower binding energies in the photoelectron spectra related to In. This phenomenon appears to be caused by the atomic arrangement, which produces increased In-N bond configurations within the matrix, as indicated by the X-ray absorption fine structure measurements. The reduction in the binding energies of group-III In, which occurs concomitantly with the atomic rearrangements of the matrix, causes the differences in the electronic properties of the system before and after annealing.

Preparation of Monodispersed Cs0.33WO3 Nanocrystals by Mist Chemical Vapor Deposition for Near-Infrared Shielding Application

“…However, some variation could be found in core-level spectra. This shows that the main XPS peaks (including Cs3d, W4f, and O1s) of annealed sample monotonously shift to lower binding energies probably due to further pyrolysis and increasing crystallinity [ 23 , 24 ]. Core-level XPS of the unannealed sample shows two spin–orbit doublets, W4f 7/2 and W4f 5/2 , peaked at 35.8 and 37.9 eV, respectively.…”

Anodic Reconstructed p+‐GaAs/a‐InAsN for Stable and Efficient Photoelectrochemical Hydrogen Evolution

“…The newly generated binding energy peak of about 20 eV belongs to the Ga 3d peak with Ga─As (Figure 2e,h). Since BE (In─As) > BE (In─N) > BE (Indium), [20] the high binding energy displacement of the In 4d spectral peak represents the increase of In-As and the decrease of In─N and amorphous active indium clusters. Moreover, for the N 1s orbital, the peak center moved from 395 eV corresponding to N─In to 400 eV and it had been reported that 400 eV in the N 1s orbital corresponds to the N─As bond (Figure 2f,i).…”