Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4

Xie, Yali; Yang, Zhaorong; Li, L; Yin, Lihua; Hu, Xiaolong; Huang, Yanan; Jian, Hongbin; Song, Wenhai; Sun, Yan; Zhou, Shengqiang; Zhang, Y. H.

doi:10.1063/1.4770486

Cited by 11 publications

(6 citation statements)

References 24 publications

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“…9 Recently, the conclusion of conductive artefact is further evidenced by Yang et al, both experimentally and theoretically. 10,11 As a result, the design or tuning of multi-functional materials for potential applications enables the necessity to clear what stands behind the novel phenomena observed.…”

Section: Introductionmentioning

confidence: 99%

Study of negative thermal expansion in the frustrated spinel ZnCr2Se4

Chen

Yang

Tong

et al. 2014

Journal of Applied Physics

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The origin of negative thermal expansion (NTE) in the bond frustrated ZnCr 2 Se 4 has been explored. ESR and FTIR document an ideal paramagnetic state above 100 K, below which ferromagnetic clusters coexist with the paramagnetic state down to T N . By fitting the inverse susceptibility above 100 K using a modified paramagnetic Curie-Weiss law, an exponentially changeable exchange integral J is deduced. In the case of the variable J, magnetic exchange and lattice elastic energy couple with each other effectively via magnetoelastic interaction in the ferromagnetic clusters, where NTE occurs at a loss of exchange energy while a gain of lattice elastic one.

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Section: Introductionmentioning

confidence: 99%

Study of negative thermal expansion in the frustrated spinel ZnCr2Se4

Chen

Yang

Tong

et al. 2014

Journal of Applied Physics

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“…Thus far, synthetic routes for chalcospinel films mainly include a wet chemistry method and a multiple-step spin-coating method using nanocrystals . The reported wet chemistry methods for the growth of CdCr 2 S 4 films, such as chemical bath deposition and electrochemical deposition, result in the poor crystallinity and impurities. − For multiple-step spin-coating method, the nanocrystal defects and capped organic ligands negatively influence the electrical properties of the films, and additional annealing results in inevitable grain boundary defects and sulfur deficiency . Precursors reported in the literature for the chemical synthesis of bulk CdCr 2 S 4 , including elemental Cd/Cr, CdS, Cr 2 S 3 , CdCl 2 , CrCl 3 , CdO, CrO 3 , and CdCr 2 S 4 powder, require elevated temperature for volatilization and reaction. ,, Thus, development of suitable cadmium and chromium precursors with sufficient volatility and stability for the growth of high-quality nanostructured CdCr 2 S 4 films by chemical methods is an important challenge and a bottleneck for development of chalcogenide-based spintronic/electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Magnetic Properties of Semiconducting Spinel CdCr₂S₄ Nanostructured Films Grown by Low-Pressure Metal–Organic Chemical Vapor Deposition

Pang

Srivastava²,

Mewes³

et al. 2019

ACS Appl. Electron. Mater.

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Magnetic semiconductors are being extensively investigated because of their promise to provide new functionalities and device concepts for spintronic applications. Nevertheless, it remains a challenge to obtain high-quality thin films of these materials for device usage, particularly of chalcogenide-based magnetic semiconductors. The chalcogenide spinel CdCr 2 S 4 is a well-established ferromagnetic semiconductor. In bulk form, it exhibits unique properties such as colossal magnetocapacitance and magnetoresistance effects and is a promising candidate for spintronic applications. Because of its semiconducting properties and band gap in the visible wavelength range, CdCr 2 S 4 offers exciting possibilities for tailoring its optical and magnetic properties. However, applications that utilize its unique combination of optical, electrical, and magnetic properties are limited because of difficulties in growing high-quality films. Herein, we demonstrate a simple low-pressure metal−organic chemical vapor deposition (MOCVD) method for growth of high-quality nanostructured CdCr 2 S 4 thin films using metal−organic precursors of Cd and Cr, which provides an attractive route for scaling to large areas. The deposited films are uniform with excellent phase purity, morphology, and crystallinity. In addition to structural and optical characterization, the static and dynamic magnetic properties of the MOCVD grown films have been investigated in detail.

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“…Recently, the ferromagnetic semiconductive spinel compounds have been studied for potential candidates for semiconductor spintronic devices. [1][2][3][4][5] A great deal of experimental attention has been concentrated on the cubic spinel compound CdCr 2 S 4 . In 2005, Hemberger et al [1] reported that the cubic spinel CdCr 2 S 4 has relaxor-like dielectric properties and colossal magnetocapacitance.…”

Section: Introductionmentioning

confidence: 99%

First-principles investigation of electronic structure, effective carrier masses, and optical properties of ferromagnetic semiconductor CdCr₂S₄

2016

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The electronic structures, the effective masses, and optical properties of spinel CdCr 2 S 4 are studied by using the fullpotential linearized augmented planewave method and a modified Becke-Johnson exchange functional within the densityfunctional theory. Most importantly, the effects of the spin-orbit coupling (SOC) on the electronic structures and carrier effective masses are investigated. The calculated band structure shows a direct band gap. The electronic effective mass and the hole effective mass are analytically determined by reproducing the calculated band structures near the BZ center. SOC substantially changes the valence band top and the hole effective masses. In addition, we calculated the corresponding optical properties of the spinel structure CdCr 2 S 4 . These should be useful to deeply understand spinel CdCr 2 S 4 as a ferromagnetic semiconductor for possible semiconductor spintronic applications.

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Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4

Cited by 11 publications

References 24 publications

Study of negative thermal expansion in the frustrated spinel ZnCr2Se4

Study of negative thermal expansion in the frustrated spinel ZnCr2Se4

Magnetic Properties of Semiconducting Spinel CdCr₂S₄ Nanostructured Films Grown by Low-Pressure Metal–Organic Chemical Vapor Deposition

First-principles investigation of electronic structure, effective carrier masses, and optical properties of ferromagnetic semiconductor CdCr₂S₄

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Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4

Cited by 11 publications

References 24 publications

Study of negative thermal expansion in the frustrated spinel ZnCr2Se4

Study of negative thermal expansion in the frustrated spinel ZnCr2Se4

Magnetic Properties of Semiconducting Spinel CdCr2S4 Nanostructured Films Grown by Low-Pressure Metal–Organic Chemical Vapor Deposition

First-principles investigation of electronic structure, effective carrier masses, and optical properties of ferromagnetic semiconductor CdCr2S4

Contact Info

Product

Resources

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Magnetic Properties of Semiconducting Spinel CdCr₂S₄ Nanostructured Films Grown by Low-Pressure Metal–Organic Chemical Vapor Deposition

First-principles investigation of electronic structure, effective carrier masses, and optical properties of ferromagnetic semiconductor CdCr₂S₄