Annealing-induced Interfacial Reactions between Gate Electrodes and HfO2/Si Gate Stacks Studied by Synchrotron Radiation Photoemission Spectroscopy

We have investigated thermal stability in amorphous-Si/HfSiO(N) gate stack structures using synchrotron-radiation photoemission spectroscopy. Core-level photoemission spectra depending on annealing temperature have revealed the mechanism of metallization reaction at the upper interface between a-Si cap layer and HfSiO(N) films under ultrahigh vacuum annealing. Silicidation reaction starts by annealing at 700 °C for both HfSiO and HfSiON films. By annealing at 800 °C, metallization reaction is rapidly promoted for the HfSiO film, while the Hf-silicide component changes into the Hf-nitride component due to its thermal stability and metallization reaction mildly proceeds for the HfSiON films.

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Annealing-induced Interfacial Reactions between Gate Electrodes and HfO2/Si Gate Stacks Studied by Synchrotron Radiation Photoemission Spectroscopy

Cited by 3 publications

References 10 publications

Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy

Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy

Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen incorporation

Thermal stability in a-Si/HfSiO(N)/Si gate stack structures studied by photoemission spectroscopy using synchrotron radiation

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