Annealing mechanisms of divacancies in silicon

Poirier, R.; Avalos, V.; Dannefaer, S.; Schiettekatte, F.; Roorda, S.

doi:10.1016/j.physb.2003.09.240

Cited by 15 publications

(20 citation statements)

References 9 publications

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“…2͑b͒ or 3͑a͔͒, and a like value was found after 2 MeV electron irradiation ͑300± 5 ps͒, 9 10 MeV electrons ͑305 ±10 ps͒, 17 and after 15 MeV electron irradiation of Fz-Si ͑295± 5 ps͒. 18 These lifetimes were interpreted to arise from V 2 , and calculations 19 support this interpretation.…”

Section: Isothermal Annealingmentioning

confidence: 82%

Annealing of electron-, proton-, and ion-produced vacancies in Si

et al. 2006

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Positron lifetime and Doppler measurements were performed on float-zone-refined and variously doped Czochralski-grown Si. The samples were irradiated by various particles ͑e − , p, Kr͒ with energies between 2 MeV and 245 MeV. Electron or proton irradiation gave rise to divacancies, whereas the damage from ion implantation ͑Kr͒ was mainly in the form of four-vacancy clusters, with only a small fraction of vacancies in the form of divacancies. In the case of impurity-lean Si, detailed isothermal annealing at various temperatures between 125°C and 500°C showed that after an initial fast decrease in divacancy concentration, a much slower process of vacancy agglomeration took place. At 450°C agglomeration steadily progressed even after 30 h of annealing at which point the average cluster size corresponded to ten monovacancies. In impurity-rich Si, containing oxygen and dopants, there is nearly no initial decrease in vacancy concentration, and isothermal and isochronal annealings showed that vacancy agglomeration was also nearly absent. Doppler data showed that vacancy-dopant complexes slowly acquired oxygen as annealing progressed, and these complexes survived annealing at 500°C for many hours. Measurements between 8 K and 530 K on samples containing divacancies, or larger clusters, showed a temperature dependence of the positron trapping rate that cannot be explained by the clusters being negatively charged, but can be explained if neutral clusters have a weakly bound positron state which at low temperatures makes trapping more efficient. Generally, the present positron experiments have given an indication for the type of defects that survive annealing at temperatures where electron paramagnetic resonance and infrared spectroscopy yield little useful information.

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Section: Isothermal Annealingmentioning

confidence: 82%

Annealing of electron-, proton-, and ion-produced vacancies in Si

et al. 2006

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“…3(b) that T 2 increases from 360 to 390 ps, and I 2 decreases from 40% to 30% (Fig. 3(c)) after annealing at the temperature of 200 1C, and at this temperature V 2 disappears [10] (Fig. 2).…”

Section: The Results Of Pasmentioning

confidence: 89%

“…2). It can also be concluded that some V 2 combine with a vacancy or divacancy and form V 3 and V 4 or stable complexes with other wandering interstitials or already existing stable interstitial clusters [11], which cause T 2 to increase. When the annealing temperature increases from 200 to 600 1C, T 2 increases from 385 to 415 ps, gradually.…”

Section: The Results Of Pasmentioning

confidence: 99%

Positron annihilation spectroscopy studies of fast neutron irradiated Czochralski silicon

Yang

et al. 2005

Journal of Crystal Growth

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“…6). It can also be concluded that some V 2 combine with a vacancy or divacancy and form V 3 and V 4 or stable complexes with other wandering interstitials or already existing stable interstitial cluster [20], which cause T 2 to increase. When the annealing temperature increases from 200 to 600 °C, T 2 increases from 385 to 415 ps, gradually.…”

Section: Positron Annihilation Spectroscopy Studies Of Vacancy Defectmentioning

confidence: 99%

“…It has been suggested that those IR absorption lines should be related to the A-center, O-V-O or divacancy-oxygen complex formed via trapping of mobile V, V 2 and O i atom. The V 2 behavior during isochronal annealing by measuring the intensity of the band at 2757 cm -1 [19,20] (10 K) is shown in Fig. 2.…”

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confidence: 99%

Neutron irradiation defects in Czochralski silicon

Chen

Liu

2009

Phys. Status Solidi (c)

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In this paper the influence of neutron irradiated on the defects and oxygen precipitation in Czochralski silicon were investigated. The vacancy‐oxygen complex (VO, A‐center) is one of the main defects formed in neutron‐irradiated Czochralski silicon (CZ‐Si). In this defect, the oxygen atom shares a vacancy, it is bonded to two silicon neighbours. Annealing of the A‐center in varied neutron‐irradiated CZ‐Si consists of two processes. The first is trapping of VO by interstitial oxygen (Oi) in low‐dose neutron‐irradiated CZ‐Si and the second is capturing of the wandering vacancy by VO, etc, in high‐dose neutron‐irradiated CZ‐Si. With the increase of the irradiation dose, the annealing behavior of the A‐center is changed and the formation of the VO2 is depressed. It is found that V2 and V4 abound in high‐dose irradiated CZ‐Si. With the increase of the annealing temperature the monovacancy type defect is annihilated. The results show that the formation of V4 is enhanced when the annealing temperature ran up to 400‐600 °C and with the FTIR absorption peak at the wave number of 829 cm–1 (VO) disappearing, five absorption peaks appear. It can be concluded that these defect‐impurity complexes prolong the lifetime of positrons. It is found that the high‐dose irradiated greatly accelerates the oxygen precipitation which leads to a sharp decrease of the interstitial oxygen with the increase of the annealing time. At room temperature, the 1107 cm–1 infrared absorption band of interstitial oxygen becomes weak and broadens to low energy side. The bulk micro‐defects, including stacking faults, dislocations and dislocation loops, were observed by the optical microscopy. New or large stacking faults grow up when the silicon self‐interstitial atoms are created and aggregate with oxygen precipitation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Annealing mechanisms of divacancies in silicon

Cited by 15 publications

References 9 publications

Annealing of electron-, proton-, and ion-produced vacancies in Si

Annealing of electron-, proton-, and ion-produced vacancies in Si

Positron annihilation spectroscopy studies of fast neutron irradiated Czochralski silicon

Neutron irradiation defects in Czochralski silicon

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