Annealing of Hall-Mobility Changes in Electron-Irradiated Germanium

Jaworowski, A. E.; Merski, K.; Rzewuski, H.; Werner, Z.

doi:10.1063/1.1709212

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1972

1976

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“…The samples used for experiments were cut from n-type antimony doped ingots with carrier concentration of sz 10l2, 2 x 1014, and 1. 6 x 1015 cm-3 and from p-type gallium doped single crystal with carrier concentration 4.4 x x 1014…”

Section: Methodsmentioning

confidence: 99%

Defects in germanium irradiated with 1 MeV electrons at 85°K

Kraitchinskii

Rzewuski²,

Suski³

et al. 1972

Phys. Stat. Sol. (a)

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Annealing processes in germanium irradiated with a heavy dose of 1 MeV electrons at 85°K and the effect of ionization background upon annealing have been studied in the temperature range 85 to 350°K for samples doped with various concentrations of impurities. A general similarity between the annealing behaviour of initially n‐ and p‐type germanium samples has been noticed. The results are considered to be consistent with the previously proposed models of an electron trapping centre in germanium assuming the centre has the form of a widely spaced Frenkel pair. On the basis of this model the observed processes are interpreted as a release of vacancies due to the dissociation of Frenkel pairs and their subsequent migration and formation of complexes with impurities and other defects.

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Section: Methodsmentioning

confidence: 99%