Annealing of Heavily Arsenic-Doped Silicon: Electrical Deactivation and a New Defect Complex

Pandey, K. C.; Erbil, A.; Cargill, G. S.; Boehme, R. F.; Vanderbilt, David

doi:10.1103/physrevlett.61.1282

Cited by 165 publications

(92 citation statements)

References 9 publications

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“…The deactivation has been theoretically explained by the creation of vacancy-impurity complexes V m -As n , but there is no agreement on the value of m and n [2,3,19]. The present results show that V -As 3 is the dominant vacancy defect in Cz grown Si͓͑As͔ 10 20 cm 23 ͒, i.e., m 1 and n 3.…”

Section: Laboratory Of Physics Helsinki University Of Technology Pcontrasting

confidence: 61%

“…Experimental evidence has been obtained on impurity precipitation as well as on the formation of vacancy-impurity complexes (see Refs. [2][3][4], and references therein). Theoretical results propose that the vacancy-impurity complexes are formed very abundantly and they may also play distinct roles in the diffusion and clustering of impurities [3].…”

Section: Laboratory Of Physics Helsinki University Of Technology Pmentioning

confidence: 99%

“…The calculated formation energies of V -As n ͑n . 2͒ complexes are negative, suggesting that total deactivation of As takes place at any doping level [2,3]. The n-type conductivity of Si(As) is possible only because the creation of defect complexes is limited by kinetic processes such as the migration of defects.…”

Section: Laboratory Of Physics Helsinki University Of Technology Pmentioning

confidence: 99%

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Identification of Vacancy-Impurity Complexes in Highlyn-Type Si

et al. 1999

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Section: Laboratory Of Physics Helsinki University Of Technology Pcontrasting

confidence: 61%

Section: Laboratory Of Physics Helsinki University Of Technology Pmentioning

confidence: 99%

Section: Laboratory Of Physics Helsinki University Of Technology Pmentioning

confidence: 99%

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Identification of Vacancy-Impurity Complexes in Highlyn-Type Si

et al. 1999

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“…It has been reported from experimental evidence and theoretical results that heavily doped materials exhibit vacancy-impurity complexes or inactive impurity clusters. [10][11][12][13] Vacancies complexes are easily detected using positron annihilation spectroscopy ͑PAS͒.…”

Section: Resultsmentioning

confidence: 99%

Tensile strain in arsenic heavily doped Si

Borot

Rubaldo

Clément

et al. 2007

Journal of Applied Physics

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In this paper we highlight the existence of tensile stress in heavily arsenic-doped epitaxial silicon ͑Si:As͒ prepared by low pressure chemical vapor deposition. Despite the large size of As atoms compared to Si ones, we demonstrate with x-ray diffraction and convergent electron beam diffraction that the heavily doped epitaxial layers show a tetragonal lattice with a reduced out of plane parameter. Using positron annihilation spectroscopy, we highlight the formation of arsenic-vacancies defects during the growth. We show that the tensile strain is related to this type of defects involving inactive As atoms and not to the As active concentration.

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“…Arsenic is also an important donor-type dopant for silicon semiconductor [40]. O'Connell et al [41] reported that As dopants were introduced into silicon surface by using triallylarsine (TAA) molecules which contain three unsaturated C=C bond.…”

Section: A Dopant Elements In Monolayer Dopingmentioning

confidence: 99%

Dendrimers as Dopant Atom Carriers

Wu¹,

Dan²

2018

Dendrimers - Fundamentals and Applications

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Properties of modern semiconducting transistors and future electron or quantum devices are essentially determined by single dopant atoms. How to precisely control the individual dopant position is one of the key factors to advance these technologies. In this chapter, we first briefly introduce the research progress in single dopant devices. To fabricate single dopant devices at large scale, we then overview our previous propose to control the locations of single dopants by self-assembly of large molecules (polyglycerols) with each carrying one dopant atom. The synthesis process, doping properties, and challenges of the molecular doping technique will be thoroughly elaborated before we conclude this chapter.

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Annealing of Heavily Arsenic-Doped Silicon: Electrical Deactivation and a New Defect Complex

Cited by 165 publications

References 9 publications

Identification of Vacancy-Impurity Complexes in Highlyn-Type Si

Identification of Vacancy-Impurity Complexes in Highlyn-Type Si

Tensile strain in arsenic heavily doped Si

Dendrimers as Dopant Atom Carriers

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