Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density

Tyagi, Subodh; Goyal, Anshu; Rana, Sovinder Singh; Meena, Udai Ram; Mishra, Puspashree; Pandey, Rakesh Kumar; Dalal, Sandeep; Pandey, Akhilesh; Garg, Arun Kumar; Kumar, Shiv; Singh, Rajendra

doi:10.1007/s10854-024-12724-z

J Mater Sci: Mater Electron

2024

DOI: 10.1007/s10854-024-12724-z

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Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density

Subodh Tyagi,

Anshu Goyal,

Sovinder Singh Rana

et al.

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MBE-grown ZnTe epitaxial layer based broadband photodetector with high response and excellent switching characteristics

Tyagi,

Sheoran,

Meena

et al. 2024

Semicond. Sci. Technol.

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Zinc telluride (ZnTe) epitaxial layers were grown on gallium arsenide (GaAs) (211) substrate at different growth temperatures by molecular beam epitaxy (MBE). The fabricated interdigitated metal semiconductor metal (MSM) configuration-based photodetector on ZnTe epitaxial layers exhibited stable and excellent photo response in a broad spectral range (250 to 550 nm) up to 125 ℃. The room temperature and higher temperature (125 ℃) values of maximum current, spectral responsivity, and detectivity at an applied bias of 5 V and 550 nm wavelength were 3.5×10-8 A, 0.1 A/W and 1×1011 Jones and 1.7×10-6 A, 2.5 A/W and 1.5×1011 Jones, respectively. The maximum photo-to-dark-current ratio (PDCR) value at zero bias and 100 ℃ was obtained for the ZnTe layer grown at an optimum growth temperature of 380 ℃. The high PDCR value exhibits the self-powered capability of the detector. Further, the detector exhibits good On-Off switching to the illuminating light with rise and decay times less than 0.29 s and 0.4 s, respectively, at room temperature. The dependence of photo response on material quality was analysed by varying the substrate growth temperature. The broadband responsivity of the ZnTe-based photodetector shows its capability as a multicolour detector in UV and visible region with the use of suitable blocking filters.

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MBE-grown ZnTe epitaxial layer based broadband photodetector with high response and excellent switching characteristics

Tyagi,

Sheoran,

Meena

et al. 2024

Semicond. Sci. Technol.

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show abstract

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Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density

Cited by 1 publication

References 38 publications

MBE-grown ZnTe epitaxial layer based broadband photodetector with high response and excellent switching characteristics

MBE-grown ZnTe epitaxial layer based broadband photodetector with high response and excellent switching characteristics

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