Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping

Abstract

We investigated the effects of postgrowth thermal annealing on optical properties of beryllium-doped InAs quantum dot ͑QD͒ heterostructures grown by molecular beam epitaxy. Thermal annealing induced a blueshift of up to 200 meV in light emission from an undoped sample, while a sample having GaAs layer heavily doped with beryllium on top of the QD region exhibited a much smaller blueshift. This phenomenon is interpreted as due to suppression of annealing-induced In/Ga interdiffusion.

Ground state lasing at 1.30 µm from InAs/GaAs quantum dot lasers grown by metal–organic chemical vapor deposition

“…Because of three-dimensional carrier confinement [1], InAs/ GaAs quantum dots (QDs) are attractive candidates for photonic devices such as lasers or photodetectors. The QD photoluminescence (PL) characteristics, closely related to the performance of QD-based devices, can vary greatly with the post-growth annealing conditions [2][3][4][5][6][7]. This is particularly important for QD lasers, in which a lasing wavelength of 1.30-1.31 μm is paramount for optimal transmission through optical fibers.…”

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

“…For acceptor doping, as widely reported in the field of MBE of GaAs [72][73][74][75], Be is a good candidate for heavy p-doping and for steep impurity profiles because of its low diffusion coefficient [76]. The covalent radius of Be is similar to the radii of Ga and As, and the lattice strain in Be-doped GaAs was expected to be small.…”

Optical properties and thermionic emission in solar cells with InAs quantum dots embedded within GaNAs and GaInNAs

“…However, dilute nitride layers and related shift in the spectral response makes the device capable to utilize photons at longer wavelengths. Furthermore, it is possible to tune the emission and absorption wavelength of QDs [21] as well as of the dilute nitride layers [22] with thermal annealing. The thermionic emission of the carriers from QD and dilute nitride layers to the GaAs conduction band was studied using temperature dependent short circuit current (I SC ) measurements.…”