Annealing of Si damage caused by reactive ion etching in SF6 gas mixtures

Abstract

Silicon surface damage caused by reactive ion etching in fluorocarbon gas mixtures containing hydrogen J. Vac. Sci. Technol. B 9, 34 (1991); 10.1116/1.585787 Radiation damage of gallium arsenide induced by reactive ion etching J. Appl. Phys. 62, 4109 (1987); 10.1063/1.339125Reactive ionetchinginduced damage in silicon using SF6 gas mixtures

GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

“…The need for hazardous gases, a high thermal budget, and high vacuum conditions are avoided with MacEtch, while otherwise required not only in conventional top-down approaches such as reactive ion etching (RIE), deep-RIE (Bosch process), and inductively couple plasma (ICP)-RIE, 23 but also in the case of bottom-up crystal growth methods such as selective-area epitaxy (SAE) 24,25 or metal-seeded, vapor-liquid-solid (VLS) epitaxy of nanowire (NW) arrays. 26,27 Furthermore, MacEtch relieves the potential for ion-beam-induced damage or plasma-induced charging damage that may result from RIE processes, 28,29 and eliminates the likelihood of forming non-uniform sidewall features (scalloping) that may result from iterative Bosch etching. 30 Contrary to conventional masked RIE methods, achievable etch depths are not limited by the lateral extent of the masked features in the MacEtch approach, thereby allowing for the formation of high aspect-ratio features.…”

Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In0.49Ga0.51P/GaAs Heteroepitaxial Films

“…Patterned wet-etching is more cost-effective in that it is solution-based and can be performed in conventional semiconductor wet benches, although it lacks the ability to yield high aspect-ratio structures due to it being isotropic or having crystallographic dependences . In contrast, RIE is a dry-etching technique that can generate high aspect-ratio geometries at the expense of exposing the target material to high energy ion bombardment, which causes sidewall damage and detrimental lattice defects in addition to the intended material removal. , Moreover, RIE uses hazardous gases and is performed under high-vacuum conditions at elevated process temperatures, making it less ideal for process simplification and cost reduction …”

“…6 In contrast, RIE is a dry-etching technique that can generate high aspect-ratio geometries at the expense of exposing the target material to high energy ion bombardment, which causes sidewall damage and detrimental lattice defects in addition to the intended material removal. 7,8 Moreover, RIE uses hazardous gases and is performed under high-vacuum conditions at elevated process temperatures, making it less ideal for process simplification and cost reduction. 6 Metal-assisted chemical etching (MacEtch, or "forward MacEtch" to distinguish it in later discussions) and inverse metal-assisted chemical etching (I-MacEtch) are top-down, solution-based fabrication methods that have been demonstrated as attractive alternatives for cost-effective generation of high aspect-ratio micro-and nanoscale semiconductor features.…”

Ordered AlxGa1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

“…Traditional top-down nanostructure fabrication methodologies include reactive-ion etching (RIE) and conventional wet-chemical etching, though these techniques come with a variety of limitations and disadvantages. , A major advantage of RIE is its directionality and ability to generate highly anisotropic geometries. However, it often requires processing at elevated temperatures with hazardous gases.…”