Annealing Stability of NiO/Ga2O3 Vertical Heterojunction Rectifiers

Li, Jian-Sian; Wan, Hsiao-Hsuan; Chiang, Chao-Ching; Ren, F.; Pearton, S. J.

doi:10.3390/cryst13081174

Cited by 4 publications

(3 citation statements)

References 37 publications

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“…Gong et al [52] and Yan et al [56] both observed interface states in the order of ~10 10 eV −1 cm −2 , which are among the lowest reported values. In addition, Li et al [57] The anisotropic nature of NiO x /β-Ga 2 O 3 in different crystal orientations has also been investigated. Deng et al [54] investigated the dependence of the band alignment of NiO x /β-Ga 2 O 3 heterostructures on various crystal orientations and revealed differences in the conduction and valence band offsets.…”

Section: P-nio X /β-Ga 2 O 3 Heterojunctionmentioning

confidence: 99%

“…Gong et al [52] and Yan et al [56] both observed interface states in the order of ~10 10 eV −1 cm −2 , which are among the lowest reported values. In addition, Li et al [57] demonstrated the thermal annealing stability of NiO x /β-Ga 2 O 3 p-n diodes from 300 to 500 • C in comparison with the as-deposited NiO x /β-Ga 2 O 3 p-n diodes. Annealing at 300 • C resulted in a reduced low forward bias current, while the specific on-resistance (R on,sp ) remained relatively stable.…”

Section: P-nio X /β-Ga 2 O 3 Heterojunctionmentioning

confidence: 99%

“…The same authors conducted a comprehensive study to optimize the NiO x doping, thickness, and junction termination extension (JTE) for NiO x /β-Ga 2 O 3 devices with kV-class operation using Silvaco TCAD simulations [60]. Additionally, they successfully demonstrated high-BV devices with a maximum of 6.5 kV, achieved through thermal annealing optimization [57]. They also showcased p-n diodes with a 3.6 kV BV and a 4.8 A current capability within a 1 mm 2 device area [61].…”

Section: P-nio X /β-Ga 2 O 3 Heterojunctionmentioning

confidence: 99%

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β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Herath Mudiyanselage,

Da,

Adivarahan

et al. 2024

Electronics

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During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.

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Section: P-nio X /β-Ga 2 O 3 Heterojunctionmentioning

confidence: 99%

Section: P-nio X /β-Ga 2 O 3 Heterojunctionmentioning

confidence: 99%

Section: P-nio X /β-Ga 2 O 3 Heterojunctionmentioning

confidence: 99%

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β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Herath Mudiyanselage,

Da,

Adivarahan

et al. 2024

Electronics

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Origin of near-failure in Au contacts to polycrystalline β-Ga2O3 at high temperatures using interfacial studies

Kaur,

Dahiya,

Shivani

et al. 2024

Applied Physics Letters

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Suitable contacts to gallium oxide are a controversial topic with contact behavior depending heavily on the pre- and post-processing conditions. Especially for the extreme environment applications such as those involving high temperatures, contact chemistry is varied and severely lacks understanding. Herein, we report on conventional pure Au contacts to polycrystalline β-Ga2O3, used as Schottky contacts, and explore the origin of their near-failure at high temperature up to 850 °C. For this purpose, β-Ga2O3 with Au interdigitated electrodes is subjected to high temperature annealing and their interface chemistry is studied and correlated with device performance for solar-blind photodetection. Around the optimized temperature of 450 °C, the performance of the PDs is found to be maximum, whereas it reduces drastically at 850 °C. Physical damage to the electrodes along with the formation of intermetallic gold-gallium alloy is observed via XPS depth profile studies and found to be the reason for the near-failure of device at extreme conditions. Although the alloy formation begins to slightly appear at 650 °C and reduces the performance, still it does not lead to device breakdown. This study proves that unlike its counterparts GaN and GaAs, which have reported alloy formation at lower temperatures, β-Ga2O3 shows a higher resilience to the formation of Au–Ga alloy and can withstand higher temperatures before the actual device failure is reached. The proposed study shows the stability of standard metal contacts to Ga2O3 based devices, which have far-reaching implications for the future commercialization of wideband gap semiconductor based (opto)electronics.

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NiO/Ga2O3 Vertical Rectifiers of 7 kV and 1 mm2 with 5.5 A Forward Conduction Current

Li,

Wan,

Chiang

et al. 2023

Crystals

Self Cite

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In this study, we present the fabrication and characterization of vertically oriented NiO/β polymorph n-Ga2O3/n+ Ga2O3 heterojunction rectifiers featuring a substantial area of 1 mm2. A dual-layer SiNX/SiO2 dielectric field plate edge termination was employed to increase the breakdown voltage (VB). These heterojunction rectifiers exhibit remarkable simultaneous achievement of high breakdown voltage and substantial conducting currents. In particular, the devices manifest VB of 7 kV when employing a 15 µm thick drift layer doping concentration of 8.8 × 1015 cm−3, concurrently demonstrating a forward current of 5.5 A. The thick drift layer is crucial in obtaining high VB since similar devices fabricated on 10 µm thick epilayers had breakdown voltages in the range of 3.6–4.0 kV. Reference devices fabricated on the 15 µm drift layers had VB of 5 kV. The breakdown is still due to leakage current from tunneling and thermionic emission and not from avalanche breakdown. An evaluation of the power figure-of-merit, represented by VB2/RON, reveals a value of 9.2 GW·cm−2, where RON denotes the on-state resistance, measuring 5.4 mΩ·cm2. The Coff was 4 nF/cm2, leading to an RON × Coff of 34 ps and FCO of 29 GHz. The turn-on voltage for these rectifiers was ~2 V. This exceptional performance surpasses the theoretical unipolar one-dimensional (1D) limit of both SiC and GaN, underscoring the potential of β-Ga2O3 for forthcoming generations of high-power rectification devices.

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Annealing Stability of NiO/Ga2O3 Vertical Heterojunction Rectifiers

Cited by 4 publications

References 37 publications

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Origin of near-failure in Au contacts to polycrystalline β-Ga2O3 at high temperatures using interfacial studies

NiO/Ga2O3 Vertical Rectifiers of 7 kV and 1 mm2 with 5.5 A Forward Conduction Current

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