Annealing study and thermal investigation on bismuth sulfide thin films prepared by chemical bath deposition in basic medium

Abstract

Bismuth sulfide thin films were prepared by chemical bath deposition using thiourea as sulfide ion source in basic medium. First, the effects of both the deposition parameters on films growth as well as the annealing effect under argon and sulfur atmosphere on asdeposited thin films were studied. The parameters were found to be influential using the Doehlert matrix experimental design methodology. Ranges for a maximum surface mass of films (3 mg cm-2) were determined. A well crystallized major phase of bismuth sulfide with stoichiometric composition was achieved at 190°C for 3 hours. The prepared thin films were characterized using Grazing Incidence X-ray diffraction (GIXRD), Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray analysis (EDX). Second, the band gap energy value was found to be 1.5 eV. Finally, the thermal properties have been studied for the first time by means of the electropyroelectric (EPE) technique. Indeed, the thermal conductivity varied in the range of 1.20-0.60 W m-1 K-1 while the thermal diffusivity values increased in terms of the annealing effect ranging from 1.8 to 3.5 10-7 m 2 s-1 .

Compositional engineering of metal-xanthate precursors toward (Bi1−xSbx)2S3 (0 ≤ x ≤ 0.05) films with enhanced room temperature thermoelectric performance

“…Bi 2 S 3 , with a direct bandgap of 1.3 eV, [25][26][27] belongs to the family of compounds M 2 X 3 (where M = Bi, Sb, and X = S, Se, Te), which are considered to be promising candidates for thermoelectric applications. Various methods for the fabrication of Bi 2 S 3 thin films have been reported, including chemical bath deposition (CBD), 28,29 chemical vapor deposition (CVD), 30,31 spray pyrolysis (S.P. ), 32,33 dip-coating technology, 34 and successive ionic layer adsorption and reaction (SILAR).…”