Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx/LaOx/Si and LaOx/CeOx/Si Structure

Abstract

We have investigated the influence of post deposition annealing (PDA) on compositional depth profiles and chemical structures of CeOx/LaOx/Si(100) and LaOx/CeOx/Si(100) interfaces by angle-resolved X-ray photoemission spectroscopy. Analyses of Ce 3d and O 1s spectra show that a Ce oxidation state changes from Ce4+ to Ce3+ by PDA in N2 at and above 500{degree sign}C and changes from Ce3+ to Ce4+ by PDA in O2 at 300{degree sign}C. This implies that a Ce oxidation state can be controlled by changing the condition of PDA. The diffusion of Ce and La atom occurs at CeOx/LaOx interface by PDA above 500{degree sign}C.

(Invited) Study on Chemical Bonding States of High-k Gate Stacks for Advanced CMOS

“…Influence of post deposition annealing on the compositional depth profiles and chemical bonding states of interfacial transition layers of laminating structure (11,13) The samples were prepared as follows. The n-Si(100) surfaces were cleaned in a mixed solution of H 2 SO 4 and H 2 O 2 (H 2 SO 4 :H 2 O 2 =4:1, SPM) followed by the treatment in 0.5% hydrofluoric acid solution to come up with hydrogen-terminated Si surfaces.…”

“…In the following the two topics will be reviewed. The first topic is the influence of post deposition annealing (abbreviated as PDA hereafter) on the compositional depth profiles and chemical bonding states of interfacial transition layers of laminating structure (LaOx/Si, ScOx/Si, LaOx/ScOx/Si, ScOx/LaOx/Si, CeOx/LaOx, and LaOx/CeOx) by ARXPS (11,13). The second topic is Hard X-ray(hν = 8 keV) excited ARXPS study on LaOx/Si structure with and without PDA (14).…”

XPS Study on Chemical Bonding States of High-k Gate Stacks for Advanced CMOS

“…First topic is the influence of post deposition annealing (abbreviated as PDA hereafter) on the compositional depth profiles and chemical bonding states of interfacial transition layers of laminating structure (LaOx/Si, ScOx/Si, LaOx/ScOx/Si, ScOx/LaOx/Si, CeOx/LaOx, and LaOx/CeOx) by ARXPS [5,6]. The high-κ layers were deposited on the hydrogen-terminated Si(100) surfaces maintained at 300°C by the electron beam bombardment of La 2 O 3 , Sc 2 O 3 and CeO 2 respectively.…”