Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx/LaOx/Si and LaOx/CeOx/Si Structure

Nohira, Hiroshi; Kon, Youichirou; Kitamura, Koji; Kouda, Miyuki; Kakushima, Kuniyuki

doi:10.1149/ma2009-02/25/2133

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(2 citation statements)

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“…In all spectra, the presence of a narrow peak at 151 eV is traced, the energy position and width of which do not depend on the conditions of HfO 2 layer formation (doping or annealing of the HfO 2 layer). In accordance with the carried depth sensitivity calculations, it is plausible to assign this peak to a signal from the Si substrate. , For the sake of clarity, all presented spectra are normalized to the intensity of the Si 0 peak. Of greatest interest is the broad band located at higher binding energies.…”

Section: Resultsmentioning

confidence: 67%

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Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor

et al. 2023

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Characterization of the composition and extension of the SiO2/HfO2 interface in the model systems Si-sub./SiO2 (7.5 nm)/FE:HfO2 (9.5 nm)/TiN (9 nm) for standard impurity concentrations and annealing temperatures (Si 3.6%, 1000 °C; Al 5.5%, 850 °C) were carried out using X-ray photoelectron spectroscopy with high kinetic energies. In addition, the crystalline properties of HfO2 were characterized by transmission electron microscopy and grazing incidence X-ray diffraction depending on the type of impurity. Formation of Hf x Si1–x O2 at the SiO2/HfO2 interface was revealed, and the dependence of its thickness d silicate and stoichiometry X on the formation of the tetragonal phase P42/nmc of HfO2 was established. It is shown that doping with aluminum followed by annealing prevents the formation of a tetragonal phase and reduces both d silicate and X by about 20% (with respect to undoped HfO2 annealed at the same temperature), in contrast to doping with Si followed by annealing, which practically does not affect d silicate and X. The results obtained are important for the problem of imbalance in the voltage drop across the gate oxides stack in a ferroelectric field-effect transistor and improvement of its endurance and retention characteristics.

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Section: Resultsmentioning

confidence: 67%

“…In accordance with the carried depth sensitivity calculations, it is plausible to assign this peak to a signal from the Si substrate. 38,39 For the sake of clarity, all presented spectra are normalized to the intensity of the Si 0 peak. Of greatest interest is the broad band located at higher binding energies.…”

Section: The Journal Of Physical Chemistrymentioning

confidence: 99%

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor

et al. 2023

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Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx/LaOx/Si and LaOx/CeOx/Si Structure

Abstract: not Available.

Cited by 1 publication

References 6 publications

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor

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Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx/LaOx/Si and LaOx/CeOx/Si Structure

Abstract: not Available.

Cited by 1 publication

References 6 publications

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of HfxSi1–xO2 at the SiO2/FE:HfO2 Interface in a Ferroelectric Field-Effect Transistor

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of HfxSi1–xO2 at the SiO2/FE:HfO2 Interface in a Ferroelectric Field-Effect Transistor

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Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor