Annealing temperature dependence of EL properties of Si/β-FeSi2/Si(111) double-heterostructures light-emitting diodes

Ugajin, Y.; Takauji, Motoki; Suemasu, Takashi

doi:10.1016/j.tsf.2005.07.342

Cited by 15 publications

(8 citation statements)

References 26 publications

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“…This thickness of 8 nm was an optimum value as determined in our previous study. 15 Next, a 400-nm-thick undoped p-Si layer was grown by MBE at 500°C. High-temperature annealing was not performed for this sample, because the ␤-FeSi 2 layer embedded in the Si agglomerates into ␤-FeSi 2 particles by high-temperature annealing, and the PL intensity decreases.…”

Section: Experimental Methodsmentioning

confidence: 99%

Photoluminescence decay time and electroluminescence of p-Si∕β-FeSi2 particles∕n-Si and p-Si∕β-FeSi2 film∕n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy

Suemasu

Ugajin

Murase

et al. 2007

Journal of Applied Physics

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We have epitaxially grown Si/ ␤-FeSi 2 /Si ͑SFS͒ structures with ␤-FeSi 2 particles on Si͑001͒, and SFS structures with ␤-FeSi 2 continuous films on both Si͑001͒ and Si͑111͒ substrates by molecular-beam epitaxy. All the samples exhibited the same photoluminescence ͑PL͒ peak wavelength of approximately 1.54 m at low temperatures. However, the PL decay times for the 1.54 m emission were different, showing that the luminescence originated from different sources. The decay curves of the SFS structures with ␤-FeSi 2 continuous films were fitted assuming a two-component model, with a short decay time ͑ ϳ 10 ns͒ and a long decay time ͑ ϳ 100 ns͒, regardless of substrate surface orientation. The short decay time was comparable to that obtained in the SFS structure with ␤-FeSi 2 particles. The short decay time was due to carrier recombination in ␤-FeSi 2 , whereas the long decay time was probably due to a defect-related D1 line in Si. We obtained 1.6 m electroluminescence ͑EL͒ at a low current density of 2 A / cm 2 up to around room temperature. The temperature dependence of the EL peak energy of the SFS diodes with ␤-FeSi 2 particles can be fitted well by the semiempirical Varshni's law. However, EL peak positions of the SFS diodes with the ␤-FeSi 2 films showed anomalous temperature dependence; they shifted to a higher energy with increasing temperature, and then decreased. These results indicate that the EL emission originated from several transitions.

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Section: Experimental Methodsmentioning

confidence: 99%

Photoluminescence decay time and electroluminescence of p-Si∕β-FeSi2 particles∕n-Si and p-Si∕β-FeSi2 film∕n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy

Suemasu

Ugajin

Murase

et al. 2007

Journal of Applied Physics

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“…3) for mesa-diodes at direct bias. The small densities of direct current (1-4 A/cm 2 ) only need for intensive EL [40] in prepared diodes as compared with current density (89 A/cm 2 ) in one layered and multilayered Si-based light emitting diodes with embedded β-FeSi 2 nanoballs (40-150 nm in sizes) in the works of Suemasu group [41][42][43]. A low energy peak at 0.78 -0.82 eV ( Fig.…”

Section: Electroluminescence Propertiesmentioning

confidence: 99%

Silicon‐silicide quasi‐zero dimensional heterostructures for silicon based photonics, opto‐ and thermoelectronics

Галкин

Goroshko

Chusovitin

et al. 2013

Phys. Status Solidi C

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Optimization of growth parameters has permitted to create monolithic nanocomposites with buried nanocrystallites (NCs) of iron and chromium disilicides, polycrystalline nanocomposites with buried Mg2Si NCs and epitaxial MnSi1.74 nanoislands on Si(111) substrate. Grown quasi‐zero dimensional heterostructures with multilayers of β‐FeSi2 NCs atop silicon p‐n junction have demonstrated the range expansion of photoelectrical sensitivity up to 1.8 µm and strong room temperature electroluminescence at 1.2 – 1.6 µm. A new approach to the selective doping of embeddded nanocrystallites inside silicon matrix has been developed on the base of the successive formation of ordered superstructures of metals (Ag, Sb) together with silicide island formation. Nanocomposite layers with n‐ and p‐type conductivity and huge Seebeck coefficient (550‐750 µV/K) in the Si‐p/β‐FeSi2 NCs/Si‐p and Si/Mg2Si NCs/Si‐p and Si/Mg2Si NCs/Si‐n nanocomposites have been created and tested. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Undoped β-FeSi 2 films grown by MBE usually exhibit p-type conductivity [18,19], and thus the pn junction was formed by an n-type Si(111) substrate and undoped p-type β-FeSi 2 . However, the turn-on voltage in the current-voltage (I-V) characteristics of the LEDs is typically 0.8 V smaller at RT than that expected (∼1.1 V) [20]. This result suggests that voltages across the p-n junction were reduced, meaning that numerous defects exist around the β-FeSi 2 /Si p-n heterojunction.…”

Section: Introductionmentioning

confidence: 77%

Investigation of current injection in β-FeSi2/Si double-heterostructures light-emitting diodes by molecular beam epitaxy

2007

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The p-Si/p-β-FeSi 2 /p-Si/n-Si light-emitting diode (LED) was fabricated by molecular beam epitaxy (MBE) on Si(111) substrates. Compared to our previous p-Si/p-β-FeSi 2 /n-Si double heterostructures (DH) LED, the turn-on voltage in the current-voltage (I-V) characteristics increased by approximately 0.2 V, meaning that defect densities at around the p-n junction were reduced. However, Si-related EL (1.05 eV) became dominant unexpectedly, and thus EL of β-FeSi 2 was suppressed accordingly. The origin of the luminescence is considered to be transitions via defect levels (1.05 eV) being due probably to Fe-B complex.

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Annealing temperature dependence of EL properties of Si/β-FeSi2/Si(111) double-heterostructures light-emitting diodes

Cited by 15 publications

References 26 publications

Photoluminescence decay time and electroluminescence of p-Si∕β-FeSi2 particles∕n-Si and p-Si∕β-FeSi2 film∕n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy

Photoluminescence decay time and electroluminescence of p-Si∕β-FeSi2 particles∕n-Si and p-Si∕β-FeSi2 film∕n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy

Silicon‐silicide quasi‐zero dimensional heterostructures for silicon based photonics, opto‐ and thermoelectronics

Investigation of current injection in β-FeSi2/Si double-heterostructures light-emitting diodes by molecular beam epitaxy

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