Annealing temperature dependences of magnetization reversal in exchange-biased bilayers

Lee, C.-G.; Gornakov, V. S.; Koo, Bon Heun; Shin, Keesam; McMichael, Robert D.; Chen, A.; Egelhoff, William F.

doi:10.1016/j.physb.2005.10.083

Cited by 6 publications

(5 citation statements)

References 9 publications

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“…Qualitatively similar results have been reported on other EB systems, e.g., FeMn/NiFe [13] and NiFe/IrMn [16]. In CoFe/IrMn films, annealing to 300 1C has produced no change in H eb and a gradual H c increase [16].…”

Section: Resultssupporting

confidence: 87%

“…In CoFe/IrMn films, annealing to 300 1C has produced no change in H eb and a gradual H c increase [16]. In IrMn/CoFeB bilayers [15,18] only gradual increase of H eb with T ann up to 350 1C has been reported.…”

Section: Resultsmentioning

confidence: 99%

“…Magnetic annealing, which is the mostly used technique for setting the EB, affects the sample as a whole, modifying its crystalline structure [13] also allowing atomic interdiffusion [14,15]. As a rule, the magnetic properties, mainly H eb and H c , are altered [16,17]. The value of T B may also change significantly [18] depending on the annealing temperature (T ann ).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of short-duration annealing on the exchange bias in IrMn/Co films

Harres

Nicolodi

Pereira

et al. 2011

Journal of Magnetism and Magnetic Materials

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of short-duration annealing on the exchange bias in IrMn/Co films

Harres

Nicolodi

Pereira

et al. 2011

Journal of Magnetism and Magnetic Materials

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“…Such structures present a particular interest for investigation into the statistics and dynamics of the magnetization process because it may be affected by modifications of the exchange interaction. In particular, the exchange coupling strength can be modified by annealing [13,14] and is very sensitive to the thickness of the AFM layer, so that its thickening can lead to breakdown of scalefree behavior [12]. In this work we apply two kinds of data analysis to deal with magnetization processes in FM/AFM bilayers.…”

Section: Itmentioning

confidence: 99%

Statistical and Multifractal Properties of Barkhausen Jumps in Exchange-Coupled Antiferromagnetic/Ferromagnetic Bilayers

Шашков

Lebyodkin

Gornakov

2014

SSP

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Statistical and multifractal properties of Barkhausen jumps in exchange-coupled ferromagnet/antiferromagnet bilayers are studied on Co/IrMn and NiFe/NiO heterostructures using a magneto-optical indicator film technique. The statistical analysis proves a nonstochastic character of magnetization jumps. In particular, power-law behavior is observed for Co/IrMn samples. Furthermore, the statistics depends on the ferromagnet layer thickness and antiferromagnet layer material structure. The average jump size displays an asymmetry between the forward and backward branches of the hysteresis loop, particularly pronounced for the structure with a thin Co layer. In spite of the observation of such an asymmetry in the activity of the domain nucleation and pinning centers, the statistical distributions of jumps do not show any significant differences for two branches of the hysteresis loop. The conclusion on a nonrandom character of the magnetization process is supported by the multifractal analysis which reveals the presence of correlations in the time arrangement of the Barkhausen jumps.

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“…T SET is generally limited by the manufacturing conditions of a giant magnetoresistive (GMR) or tunneling magnetoresistive (TMR) device. 2 Different results have been reported [3][4][5] for systems containing IrMn, the AF material of choice for the hard disk industry, regarding the effect of setting EB between 200 C and 400 C. Atomic interdiffusion is expected to have strong influence on the performance of the devices. 6 Also, as the thickness of the AF is reduced, the contribution of the interfacial spins 7 becomes more significant for their performance.…”

mentioning

confidence: 99%