Annealing temperature effect on structural, optical, morphological and electrical properties of CdS/Si(100) nanostructures

Al‐Douri, Y.; Ameri, M.; Bouhemadou, A.; Khenata, R.

doi:10.1007/s00542-015-2584-6

Cited by 13 publications

(3 citation statements)

References 42 publications

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“…8, the photovoltaic responses dramatically improved under simulated 1 sun 1.5 AM solar illumination. The photovoltaic performance parameters of the J–V curve analysis [43] are summarised by plotting software as shown in Table 1. The photoelectric conversion efficiency ( η ) and fill factor (FF) [44] are important parameters to characterise the film quality and the load capacity of solar cell, respectively.…”

Section: Resultsmentioning

confidence: 99%

Photovoltaic performance of an alternating cold–hot method deposited CdSe thin films

Jiang

Wang

et al. 2017

Micro & Nano Letters

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Cadmium selenide (CdSe) thin films were prepared on indium tin oxide substrate by an alternating cold-hot method, in which cadmium nitrate solution was used as a cold deposition solution, while sodium selenite and potassium borohydride mixed solution was used as a hot deposition solution. The influences of the preparation conditions such as the concentration of Cd(NO 3) 2 , the number of deposition cycle and the cycle time, on the photoelectric performance of the sample under simulated sunlight were explored. The results show that the CdSe thin film prepared under the reaction conditions of 0.06 mol/l Cd(NO 3) 2 at the tenth deposition cycle (30 s per cycle) reaches the highest photovoltage of 0.285 V. Under the simulated solar illumination, the open-circuit voltage and short-circuit currents are 0.419 V and 5.57 mA/cm 2 , respectively. X-ray diffraction indicates that the strongest diffraction peak at 42.215°of the (111) crystal plane is corresponding to 15.15 nm CdSe nanocrystals. Scanning electron microscopy observation shows that the thickness of the CdSe film is about 200 nm and the size of the spherical and uniformly dispersed nanocrystals is around 50 nm.

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Section: Resultsmentioning

confidence: 99%

Photovoltaic performance of an alternating cold–hot method deposited CdSe thin films

Jiang

Wang

et al. 2017

Micro & Nano Letters

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“…Energy band of Te is 0.368 eV [1,2]. Many techniques have devoted to prepare Te thin films like molecular beam epitaxy, solution growth [3][4][5][6][7]. Chemical spray deposition is a low cost and convenient method has recently been utilized to prepare thin polycrystalline films of a wide variety of compound semiconductors by a number of investigators among them [8,9].…”

Section: Introductionmentioning

confidence: 99%

OPTICAL AND STRUCTURAL PERFORMANCE OF NANOSTRUCTURED Te THIN FILMS BY (CSP) WITH VARIOUS THICKNESSES

Chiad¹,

NOOR²,

ABDULMUNEM³

et al. 2020

JOR

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In this study, were investigated structural, optical properties and morphological of Te Nano-thin films with different thicknesses by Chemical spray pyrolysis (CSP) method. The structural properties of the films were studied as a Te dopant at 150-450 thicknesses. The films were characterized by XRD to study film structure. It was observed that the hexagonal wurtzite structure of ZnO for all samples. The films exhibited wurtzite (102) preferential growth in different thicknesses. Grain size values calculated from Scherrer’s formula, were varied in range of (96-84) nm. The band gap energy values were calculated respectively for Te thickness samples

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“…Because of its optimal band alignment between absorber layers and window layers in CIGS solar cells, CdS is one of the commonly employed buffer-layer materials that can minimize the lattice mismatching at the heterojunction interface . Additionally, on the basis of the recent investigation of CdS, − various techniques have been utilized to fabricate CdS thin films, such as electrodeposition, chemical-bath deposition (CBD), screen printing, spin-coating, and physical vapor deposition . In particular, the CBD method has been intensively applied for the industrial deposition of CdS thin layers on different substrates because of its low cost, simplicity, and high device efficiency.…”

Section: Introductionmentioning

confidence: 99%

Low-Pollution and Controllable Selective-Area Deposition of a CdS Buffering Layer on CIGS Solar Cells by a Photochemical Technique

Yuan

Liao

et al. 2017

ACS Sustainable Chem. Eng.

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A chemical-bath deposition method has recently been applied for the industrial deposition of CdS buffer layers in high-efficiency Cu(In, Ga)Se 2 (CIGS) solar cells; however, its massive raw material waste and heavy pollution have also hindered its long-range industrialization. In this study, a type of low-pollution and controllable selective-area deposition of CdS thin films on cells was proposed and conducted by a photochemical deposition (PCD) technique using an aqueous solution containing S 2 O 3 2− , SO 3 2− , and Cd 2+ . The as-deposited films are low-crystallinity, uniform, and compact with thicknesses of 30−50 nm. Moreover, the depositions of CdS thin films were further investigated by tuning the deposition time, absorption of cadmium ions, sulfur concentration, and light intensity. Additionally, an ion-by-ion mechanism was proposed for the growth of CdS thin films by a PCD technique. Furthermore, the optimal CdS thin layer was applied in CIGS solar cells, which showed a high efficiency of 10.45%. This research would give new insight into the efficient deposition of CdS thin films on solar cells with low pollution.

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Annealing temperature effect on structural, optical, morphological and electrical properties of CdS/Si(100) nanostructures

Cited by 13 publications

References 42 publications

Photovoltaic performance of an alternating cold–hot method deposited CdSe thin films

Photovoltaic performance of an alternating cold–hot method deposited CdSe thin films

OPTICAL AND STRUCTURAL PERFORMANCE OF NANOSTRUCTURED Te THIN FILMS BY (CSP) WITH VARIOUS THICKNESSES

Low-Pollution and Controllable Selective-Area Deposition of a CdS Buffering Layer on CIGS Solar Cells by a Photochemical Technique

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