Annealing temperature effect on the optical properties of thermally oxidized nano-crystalline ZrO2 thin films grown on glass substrates

Structural and Optical Properties of Thermally Oxidized Zirconium Dioxide Films

“…The films formed with substrate bias leads to high dielectric constant and low leakage currents. Larijani et al [13] reported that the optical band gap of ZrO 2 thin films formed by thermal oxidation of sputter deposited zirconium films increased from 3.85 eV to 3.96 eV and the refractive index decreased from 2.8 to 2.2 with increase of oxidation temperature from 400 o C to 550 o C respectively. High refractive index and large band gap of zirconium dioxide thin films find application in broad band filters and active optoelectronic devices.…”

“…These different phases can be tailored made in thin films achieve required hardness, refractive index and optical band gap. Various physical deposition techniques such as thermal oxidation of zirconium films [12,13], electron beam evaporation [14][15][16][17], pulsed laser deposition [18,19], vacuum arc deposition [20,21], DC magnetron sputtering [22][23][24][25], RF magnetron sputtering [26][27][28][29][30], molecular beam epitaxy [31], and chemical deposition methods namely, chemical bath deposition [32], spray pyrolysis [33], sol-gel process [34][35][36] and atomic layer deposition [37,38] were employed for the growth of zirconium dioxide thin films. Among these techniques, magnetron sputtering has the advantage in the growth of films on large area substrates and at low substrate temperatures.…”

“…al. [13] was reported that the optical band gap increased from 3.85 eV to 3.96 eV with increase of oxidation temperature in the magnetron sputtered films. Pakma et al [32] noticed the optical band gap was in the range 2.40 -3.96 eV depending on the constituents in the chemical bath and the process temperature of the films formed by chemical bath deposition.…”

“…It confirmed that the Zr films were transformed in to ZrO 2 films at the oxidation temperature of 400 o C. Further increase of oxidation temperature to 500 o C intensity of the diffraction peaks enhanced with the presence of additional reflections of (111) and (132) of ZrO 2 . Lajirani et al [13] noticed that the sputter deposited Zr films were transformed in to ZrO 2 films at the oxidation temperature of 500 o C with presence of mixed monoclinic and tetragonal phases. Hembram et al [22] achieved single phase zirconium dioxide thin films at oxidation temperature of 600 o C in magnetron sputtered films.…”

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“…20 Ling et al 11 reported that the optical band gap of the electron beam evaporated films was 5.4eV. Low optical band gap of 3.85 eV was noticed by Larijani et al 21 in thermally oxidized films. Zhao et al 22 obtained optical band gap of 5.65 eV in RF magnetron sputtered films.…”