Annular Surface Micromachining of Titanium Tubes Using a Magnetorheological Polishing Technique

Song, Wanli; Peng, Zhen; Li, Peifan; Shi, Pei Cheng; Choi, Seung–Bok

doi:10.3390/mi11030314

Cited by 20 publications

(13 citation statements)

References 30 publications

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“…Then, the hydrodynamic pressure and CIP chains together presses the abrasive particles more towards the surface of wafer. 34 Therefore, the movement of abrasive particles was obstructed by the CIP chains, which results in more material removal from the surface 35 and thus affects the surface quality.…”

Section: Resultsmentioning

confidence: 99%

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

Srivastava

Pandey

2021

Proceedings of the Institution of Mechanical Engineers, Part C:

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In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

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Section: Resultsmentioning

confidence: 99%

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

Srivastava

Pandey

2021

Proceedings of the Institution of Mechanical Engineers, Part C:

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“…Therefore, machining operations which do not require any form of contact between the tool and the workpiece began to gain attention. Some of the common machining techniques covered in this review include electrochemical machining (ECM) [101], laser beam machining (LBM) [81,102], electrical discharge machining (EDM) [103], chemical machining [104] and magnetic abrasive finishing, a surface finishing technique [105,106]. Among these techniques, the chemical machining process has not received so much attention in recent time.…”

Section: Non-conventional Machiningmentioning

confidence: 99%

“…The major advantage of this process is that workpiece can be machined to obtained high quality surface finish in the nanometer range. Also, planar surface finish, cylindrical surface finish, intricate parts and finishing of other complex shaped profiles can be achieved using MAF [105,106,155]. Like other non-conventional machining process, a huge number of parameters influence MAF performance.…”

Section: Magnetic Abrasive Finishingmentioning

confidence: 99%

An overview of conventional and non-conventional techniques for machining of titanium alloys

et al. 2020

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Machining is one of the major contributors to the high cost of titanium-based components. This is as a result of severe tool wear and high volume of waste generated from the workpiece. Research efforts seeking to reduce the cost of titanium alloys have explored the possibility of either eliminating machining as a processing step or optimising parameters for machining titanium alloys. Since the former is still at the infant stage, this article provides a review on the common machining techniques that were used for processing titanium-based components. These techniques are classified into two major categories based on the type of contact between the titanium workpiece and the tool. The two categories were dubbed conventional and non-conventional machining techniques. Most of the parameters that are associated with these techniques and their corresponding machinability indicators were presented. The common machinability indicators that are covered in this review include surface roughness, cutting forces, tool wear rate, chip formation and material removal rate. However, surface roughness, tool wear rate and metal removal rate were emphasised. The critical or optimum combination of parameters for achieving improved machinability was also highlighted. Some recommendations on future research directions are made.

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“…At present, most silicon wafer and corresponding micromachines use polishing as their final processing [15,16]. Chemical mechanical polishing (CMP) is one of the most widely used processing methods to obtain high surface quality in batch production [17,18].…”

Section: Introductionmentioning

confidence: 99%

Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer

et al. 2020

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Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was proposed, which applied a non-uniform electric field to the polishing area to slow down the throw-out effect of centrifugal force, thereby achieving high-efficiency and high-quality polishing of silicon wafers. The principle of DEPP was described. Orthogonal experiments on important polishing process parameters were carried out. Contrast polishing experiments of silicon wafer were conducted. The orthogonal experimental results showed that the influence ratio of electric field intensity and rotation speed on material removal rate (MRR) and surface roughness was more than 80%. The optimal combination of process parameters was electric field intensity 450 V/mm, rotation speed 90 rpm, abrasive concentration 30 wt%, size of abrasive particle 80 nm. Contrast polishing experiments indicated that the MRR and material removal uniformity of DEPP were significantly better than traditional chemical mechanical polishing (CMP). Compared with the traditional CMP, the MRR of DEPP was increased by 17.6%, and the final surface roughness of silicon wafer reached Ra 0.31 nm. DEPP can achieve high-efficiency and high-quality processing of silicon wafer.

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Annular Surface Micromachining of Titanium Tubes Using a Magnetorheological Polishing Technique

Cited by 20 publications

References 30 publications

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

An overview of conventional and non-conventional techniques for machining of titanium alloys

Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer

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