Anodic current transient for n-Si|SiO2 electrodes in HF solution: the relationship between the current and the interface structure

Bensliman, Fahd; Mizuta, Naomi; Matsumura, Michio

doi:10.1016/j.jelechem.2004.02.009

Cited by 5 publications

(3 citation statements)

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“…[76] Another approach called metal assisted chemical etching (MACE) has been reported for the nanopores formation based on unique electrochemical properties of silicon wafer. [80][81][82][83] Tsujino and Matsunura reported that in HF and hydrogen peroxide (H 2 O 2 ) solvent combining the function of silver particle as a catalysis, the cylindrical nanoholes were formed. [82] They also reported in 2007 that the concentration of H 2 O 2 would affect the pore size and pore morphology also depended on the morphology of catalysis.…”

Section: Wet Etchingmentioning

confidence: 99%

Solid‐State Nanopore Array: Manufacturing and Applications

Liu

Zhou

Wang

et al. 2022

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Section: Wet Etchingmentioning

confidence: 99%

Solid‐State Nanopore Array: Manufacturing and Applications

Liu

Zhou

Wang

et al. 2022

Small

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“…A related current peak is observed when an oxidized surface is exposed to fluoride electrolyte. This phenomenon indicates electron injection by the intermediate states when oxide dissolution is nearly complete (56,58,59). In-situ infrared spectroscopy of the surface in the fluoride electrolyte indicates that the surface remains essentially hydrogenated in this potential range (60).…”

Section: Silicon In Fluoride Electrolytesmentioning

confidence: 99%

“…Then, at some time during the oscillation, the potential is stepped to a value close to OCP, and the current is monitored as a function of time. The recording exhibits a peak, which has been attributed to electron injection from dissolution intermediates at the end of the dissolution of the oxide (56,58,59). The delay at which the current peak occurs can then be taken as a qualitative indication of the oxide thickness at the time when the potential was stepped.…”

Section: Silicon In Fluoride Electrolytesmentioning

confidence: 99%

(Allesandro Volta Award Presentation) Facts and Challenges in the Electrochemistry and Wet Surface Chemistry of Silicon

Chazalviel¹

2013

ECS Trans.

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Silica being insoluble in non-fluoride medium, anodic oxide films are readily formed on silicon. Dissolution of any oxide film in HF leaves a surface covered with hydrogen. Anodization in HF leads to the formation of porous silicon, the hydrogen coating staying present during the process. At higher potentials, electropolishing is observed, with the presence of a thin oxide layer on the surface. At still higher potentials, mesoporous oxide films are obtained. In non-aqueous media, trace amounts of water unavoidably lead to irreversible formation of a silica layer. In methanol a more stable behavior is obtained, due to chemical surface modification by grafting of methoxy groups. Other modifications of the silicon surface include the formation of covalent Si-C bonds, which holds promises for applications, especially sensors. In the near future, challenges in silicon electrochemistry include a better understanding of several fundamental issues, and also improved preservation of the surface against oxidation.

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Boring Deep Cylindrical Nanoholes in Silicon Using Silver Nanoparticles as a Catalyst

Tsujino

Matsumura²

2005

Advanced Materials

231

173

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Silicon shows unique electrochemical properties in solutions containing hydrofluoric acid.[1±4] Cylindrical holes electrochemically formed in silicon in these solutions have recently attracted much attention due to their possible applications in photonic crystals, [5] micromachining, [6] etc. These nanoholes are generated in the <100> direction at those positions where small pits were preformed by photolithography. [7,8] Here we report that, without using an electrochemical method, cylindrical nanoholes can be generated by immersing silicon wafers loaded with Ag nanoparticles in a solution containing hydrofluoric acid and hydrogen peroxide. We have been studying the chemical etching of silicon for making an antireflective surface structure (textured structure) in order to increase the efficiency of multi-crystalline Si solar cells. [9] In the course of this study, we found that the use of Ag nanoparticles as a catalyst is especially effective for making the textured structure. We also found that the catalysis by Ag nanoparticles results in the formation of cylindrical nanoholes in single-crystalline Si wafers when the treatment is continued for a longer time. During the process, the Ag particles gradually sink into the silicon, forming nanoholes as deep as 500 lm and with diameters of about 50 nm. Figure 1 shows a scanning electron microscope (SEM) image of Ag particles deposited on the surface of a p-type Si(100) wafer by electroless plating (see Experimental).[10]The sizes of the particles are mostly between 30 nm and 100 nm. There was no significant difference between the p-type and n-type wafers in densities and size distributions of the deposited Ag particles. In addition, the (100) and (111) orientations did not affect the Ag deposition. Other metal particles were also deposited on Si wafers from solutions containing metal ions, such as Pt, Pd, and Cu.After the deposition of these metal particles, the Si wafers were etched in a mixed solution of 10 % HF and 30 % H 2 O 2 (10:1 v/v) for 30 min in the dark at room temperature. The etched surface of the Si wafers was covered with a microporous Si layer. The microporous Si layer became as thick as 3 lm when Pt particles were used as the catalyst, and showed orange photoluminescence under UV irradiation at 265 nm. Since Pt has a strong catalytic activity in the reduction of hydrogen peroxide, [11] it is assumed that valence-band electrons in Si are drawn through the Si/metal interface as hydrogen peroxide is reduced. As a result, positively charged holes are generated in the Si, leading to the formation of a microporous

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Anodic current transient for n-Si|SiO2 electrodes in HF solution: the relationship between the current and the interface structure

Cited by 5 publications

References 35 publications

Solid‐State Nanopore Array: Manufacturing and Applications

Solid‐State Nanopore Array: Manufacturing and Applications

(Allesandro Volta Award Presentation) Facts and Challenges in the Electrochemistry and Wet Surface Chemistry of Silicon

Boring Deep Cylindrical Nanoholes in Silicon Using Silver Nanoparticles as a Catalyst

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