Anodic Oxidation of GaAs in Mixed Solutions of Glycol and Water

Hasegawa, Hajime; Hartnagel, H.L.

doi:10.1149/1.2132915

Cited by 254 publications

(101 citation statements)

References 6 publications

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“…After the onset of anodic current, the cyclic voltammograms behaved in a fashion similar to Fig.1. Namely, they showed a peak and hysteresis, indicating the occurrence of the so-called active-passive transition [15]. At small overpotentials, active anodic dissolution took place, and at larger overpotentials beyond the peaks, the semiconductor surface was covered with a passive oxide film, leading to passivation with nanopore formation as discussed later.…”

Section: Wet Etching and Behavior Of N-inp Anodesmentioning

confidence: 85%

“…However, a detailed SEM study has revealed that pores are produced by anodic etching in all of the above three electrolytes. This is distinctly different from the case of viscous eletctrolyte such as aqueous solution of tartaric acid mixed with glycol (AGW electrolyte [15,31]) where uniform anodic oxide films grow in proportion to the overpotential.…”

Section: 1)formation Of Nanoporesmentioning

confidence: 92%

“…Namely, the pulsed current is much larger than the slowly ramped current at the same overpotential, and does not show a peak. This can be explained by the fact that a finite time is required to cause active-passive transition as discussed in the case of anodic oxidation of GaAs [15]. Thus, no current-blocking oxide layer is formed in a short pulse of ms duration even at a very large pulse peak voltage and etching takes place during the pulse-on time, t on .…”

Section: Uniformity and Controllability Of Anodic Etching Of Inpmentioning

confidence: 99%

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Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Hasegawa

Sato

2005

Electrochimica Acta

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This paper reviews recent efforts by authors' group to utilize electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures. Topics include precise photo anodic and pulsed anodic etching of InP, formation of arrays of <001>-oriented straight nanopores in n-type (001) InP by anodization and their possible applications, and macroscopic and nanometer-scale metal contact formation on GaAs, InP and GaN by a pulsed in-situ electrochemical process, which remarkably reduces Fermi level pinning. All the results indicate that electrochemical processes can achieve unique and important results which the conventional semiconductor technology cannot realize, anticipating their increased importance in future semiconductor nanotechnology and nanoelectronics. Key words:III-V semiconductors, anodic etching, nanopore, electrodeposition, Schottky barrier 1.IntroductionIt is widely recognized that artificial semiconductor nanostructures such as quantum wires (QWRs) and quantum dots(QDs) give rise to new rich functionalities to materials. They produce new quantum state spectra with novel state transitions and linear and non-linear quantum transport phenomena, and open up opportunities for novel quantum devices which control quantum-mechanical behavior of electrons and photons in various sophisticated ways.The standard approach for semiconductor nanostructure formation is to use fine crystal growth techniques such as molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). To fabricate devices, various standard etching and metal deposition techniques are used together with standard lithography techniques. However, the electrochemical approaches, if it attains sufficiently high controllability at the nanometerscale, seems to be highly useful for nanostructure formation and processing. The expected advantages include: (1) process simplicity and versatility, (2) capability of self-organization, (3) low processing temperature, (4) low process induced damage, (5) precise electrical control and (6) low processing costs.Some well known examples are porous Si formation [1,2] and use of anodized alumina as nanostructure templates for formation of carbon nanotubes [3].The purpose of this paper is to review recent attempts by the authors' group at RCIQE, Hokkaido University, that have been carried out in order to investigate feasibility of utilizing electrochemical processes for nanometer-scale processing and nanostructure formation in III-V semiconductors. Topics discussed in this paper include controlled (1) anodic etching of InP,

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Section: Wet Etching and Behavior Of N-inp Anodesmentioning

confidence: 85%

Section: 1)formation Of Nanoporesmentioning

confidence: 92%

Section: Uniformity and Controllability Of Anodic Etching Of Inpmentioning

confidence: 99%

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Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Hasegawa

Sato

2005

Electrochimica Acta

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“…Photoenhanced oxidation of n-GaN was carried out in a glycol solution consisting of propylene glycol and 3 wt % tartaric acid at a ratio of 2:1, 22 under potentiostatic control at room temperature, as illustrated in Fig. 1͑a͒.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Typical assumptions for the initial stage of oxidation have been actively discussed for GaAs. Hasegawa et al 22 explained that when the anodic oxide is soluble in the electrolyte, an active-passive transition occurs before surface oxidation. Thus, at the initial stage of the process, oxidation does not occur until the oxidation current exceeds a certain value, j l .…”

Section: A Cyclic Voltammetry Measurement and Oxidation Ratementioning

confidence: 99%

Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Shiozaki

Hashizume

2009

Journal of Applied Physics

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Surface control of n-GaN was performed by applying a photoelectrochemical oxidation method in a glycol solution to improve the optical and electronic characteristics. The fundamental properties of the oxidation were investigated. The oxidation, chemical composition, and bonding states were analyzed by x-ray photoelectron spectroscopy and micro-Auger electron spectroscopy, in which confirmed the formation of gallium oxide on the surface. The oxide formation rate was about 8 nm/min under UV illumination of 4 mW/ cm 2 . After establishing the basic properties for control of n-GaN oxidation, the surface control technique was applied to achieve low-damage etching, enhancement of the photoluminescence intensity, and selective passivation of the air-exposed sidewalls in an AlGaN/GaN high electron mobility transistor wire structure. The capacitance-voltage measurement revealed the minimum interface-state density between GaN and anodic oxide to be about 5 ϫ 10 11 cm −2 eV −1 , which is rather low value for compound semiconductors.

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Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells

Deenapanray

Petravić

et al. 2000

Surf. Interface Anal.

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Anodic Oxidation of GaAs in Mixed Solutions of Glycol and Water

Abstract: Die Titelmethode (Elektrolyt: Propylenglykol + wäßrige 3%ige NH4OH‐gepufferte Weinsäurelösung) ist der herkömmlichen Anodisierung in wäßrigen Lösungen ohne Glykol wesentlich überlegen.

Cited by 254 publications

References 6 publications

Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution

Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells

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