1969
DOI: 10.1021/cr60259a005
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Anodic oxide films on aluminum

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Cited by 1,173 publications
(940 citation statements)
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References 28 publications
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“…12,19,29 The dissolution reaction (Al 2 O 3 + 6H + → 3H 2 O + 2Al 3+ ) only takes place at the electrolyte/oxide interface, which cannot supply charge carriers to establish a conductive path between two interfaces (electrolyte/oxide and oxide/Al interfaces). 29 That is to say, the so-called dissolution current across the barrier oxide layer is impossible to be formed.…”
Section: Resultsmentioning
confidence: 99%
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“…12,19,29 The dissolution reaction (Al 2 O 3 + 6H + → 3H 2 O + 2Al 3+ ) only takes place at the electrolyte/oxide interface, which cannot supply charge carriers to establish a conductive path between two interfaces (electrolyte/oxide and oxide/Al interfaces). 29 That is to say, the so-called dissolution current across the barrier oxide layer is impossible to be formed.…”
Section: Resultsmentioning
confidence: 99%
“…We have proposed that the formation of oxide film is determined by J ion , and J e gives rise to the evolution of oxygen gas which is responsible to the pore formation. 2,16,17,28 The ionic current (J ion ) and the electric field strength (E) are related through the exponential law 13,19 …”
Section: Resultsmentioning
confidence: 99%
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“…The CNTs synthesized by conventional methods of arc discharge, laser ablation, and CVD [83][84][85] are usually cap-closed. Because the nanochannels of AAO films can be either one-side open or both-side open [30,31,86], the cap structure of AAO-CNTs can be controlled with good uniformity by selecting different types of AAO templates [33,38]. [87][88][89][90][91].…”
Section: Synthesis Of Cnts By the Aao Template Methodsmentioning
confidence: 99%
“…equilibrium between the growth rate of the alumina and its dissolution in the acidic electrolyte. The hexagonal self-order of the pores can be explained by the repulsive forces due to the volume expansion associated with the anodization process (14). By appropriate selection of the process conditions, films with pore diameters between Ͻ10 nm up to 2 m, pore density between 10 8 and 10 11 pores cm Ϫ2 , and film thickness up to 200 m can be prepared (16).…”
Section: Introductionmentioning
confidence: 99%