2006
DOI: 10.1134/s1063776106020105
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Anomalies in the optical properties of nanocrystalline copper oxides CuO and Cu2O near the fundamental absorption edge

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Cited by 34 publications
(24 citation statements)
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“…The further shift toward higher photon energies may also be attributed to the quantum size effect as well as to defects and surface states present in these nanogranular Cu 2 O films. 34 The reported value of 2.57 eV here also agrees with other experimental values in literature, which range from 2.4 to 2.6 eV. 25,29,32 Bottom-gate, bottom-contact (BG-BC) transistors [ Figure 4(a)] based on spray-coated Cu 2 O thin-films also show promising results.…”
supporting
confidence: 79%
“…The further shift toward higher photon energies may also be attributed to the quantum size effect as well as to defects and surface states present in these nanogranular Cu 2 O films. 34 The reported value of 2.57 eV here also agrees with other experimental values in literature, which range from 2.4 to 2.6 eV. 25,29,32 Bottom-gate, bottom-contact (BG-BC) transistors [ Figure 4(a)] based on spray-coated Cu 2 O thin-films also show promising results.…”
supporting
confidence: 79%
“…The usual method of determining g E involves plotting Table 2. The indirect band gap of CuO nanoparticles synthesized using both the solvents show similar values and the values red shifted ~ 0.24 to 0.27 eV as compared to bulk value (1.45 eV) [21]. The increasing red shift with decreasing particle size suggests that the defects responsible for the intra-gap states are primarily of surface defects [22][23][24].…”
Section: Uv-visible Characterization Of Cuo Nanoparticlementioning
confidence: 73%
“…Moreover, there are few reports for CuO nanoparticles where a proportional dependence between the optical energy gap and the nanocrystallites diameter has been observed due to the defect states within the optical gap. [39,40] The ALD thin film technique employed here is based on selflimiting surface-saturative reactions of alternately pulsed gaseous precursors. This unique deposition mechanism allows for the excellent thickness control for homogeneous and pinhole-free thin films deposited on high aspect ratio geometries [41,42].…”
Section: Introductionmentioning
confidence: 99%