Anomalies of magnetic properties of layered crystals InSe containing Mn

Lashkarev, G. V.; Slyn'ko, V. V.; Kovalyuk, Z. D.; Sichkovskyi, Vitalii; Radchenko, M. V.; Aleshkevych, P.; Szymczak, R.; Dobrowolski, W.; Minikaev, R.; Zaslonkin, A. V.

doi:10.1016/j.msec.2006.07.028

Cited by 16 publications

(13 citation statements)

References 5 publications

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“…Cooling the sample down to 2.4 K in the magnetic field of 100 Oe (FC regime) increases the magnetic susceptibility in the whole temperature interval studied up to 300 K (Fig. 5) [10]. The difference between FC and ZFC regimes gives the preference to the cluster model of ferromagnetism which is a version of superparamagnetic model with spin glass state.…”

Section: Inse M Nmentioning

confidence: 97%

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Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

et al. 2008

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Magnetic susceptibility, Hall effect and resistivity of narrow-gap Ge 1−x−y Sn x Mn y Te single crystals (x = 0.083 ÷ 0.115; y = 0.025 ÷ 0.124) were investigated in the temperature range 4.2-300 K revealing a ferromagnetic ordering at T C ≈ 50 K. Temperature dependence of magnetization indicates a superparamagnetic phase with magnetic clusters arranging in a spin glass state below the freezing temperature T f . Magnetic structure of InSe Mn 2D-ferromagnetic single crystals was studied by SQUID magnetometry, neutron diffraction, secondary ion mass spectroscopy, and wave dispersive spectra. Hysteresis loops of magnetization were observed at least up to 350 K. The cluster model of ferromagnetism is considered. The formation of self-assembled superlattice ferromagnetic InSe:Mn/antiferromagnetic MnSe during growth process and further annealing was established.

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Section: Inse M Nmentioning

confidence: 97%

“…Decrease in lattice parameter with increasing Mn doping proves the creation of solid solution In 1−x Mn x Se which fills more than 90% of crystal volume. Besides that, samples contain the second (cubic) antiferromagnetic (AFM) phase MnSe (F m3m, a = 5.456Å) (with two Néel temperatures T N1 = 130 K, T N2 = 260 K) [10].…”

Section: Inse M Nmentioning

confidence: 99%

Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

et al. 2008

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“…In [12,13], the presence of weak ferromagnetism in InSe layered semiconductors doped with Mn was shown. Since cobalt is a ferromagnetic material, the magnetic field can affect its incorporation into layered semiconductors.…”

Section: Resultsmentioning

confidence: 99%

Ferromagnetism of layered GaSe semiconductors intercalated with cobalt

et al. 2012

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“…The further investigations of (In,Mn)Se crystals [14] explained some of their previously unclear properties such as nature of the magnetic susceptibility peaks at ~163 and 266 K. The ferromagnetic ordering with the Curie temperature T C > 350 K was revealed [15]. There appeared strong motivation to continue the study of this magnetic semiconductor.…”

Section: Se Mnmentioning

confidence: 96%

Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature

Lashkarev¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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We present a detailed study of layered semiconductor InSe doped with Mn. Xray and neutron diffraction analyses of (In,Mn)Se single crystals show the presence of a main phase as solid solution, the second antiferromagnetic MnSe phase, and traces of In Se MnIn 1 x x − 4 Se 3 . Magnetic measurements reveal ferromagnetic behavior of (In,Mn)Se with the Curie temperature about 800 K. The ferromagnetic cluster model and exchange interaction via 2D electron gas, as the reasons of spontaneous magnetization, are discussed. The dramatic transformation of (In,Mn)Se electron spin resonance (ESR) spectra as a function of temperature is revealed. At the magnetic field perpendicular to crystallographic c axis, a low-field line within the temperature range 70 down to 4.7 K is observed. It shifts to smaller magnetic fields with temperature decrease. Neutron diffraction studies reveal the strong rise for one of the reflection peaks with temperature decrease in the same temperature region where ESR spectra transformation occurs. This peak corresponds to double MnSe interplanar distance in the [111] direction what is a period of its magnetic lattice. Magnetic structure of (In,Mn)Se single crystal is discussed.

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Anomalies of magnetic properties of layered crystals InSe containing Mn

Cited by 16 publications

References 5 publications

Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

Ferromagnetism of layered GaSe semiconductors intercalated with cobalt

Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature

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Anomalies of magnetic properties of layered crystals InSe containing Mn

Cited by 16 publications

References 5 publications

Ferromagnetism of Narrow-Gap Ge1-x-ySnxMnyTe and Layered In1-xMnxSe Semiconductors

Ferromagnetism of Narrow-Gap Ge1-x-ySnxMnyTe and Layered In1-xMnxSe Semiconductors

Ferromagnetism of layered GaSe semiconductors intercalated with cobalt

Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature

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Product

Resources

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Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors