“…While the field of HgTe quantum dot (QD) colloidal chemistry that started back in the 90s in Horst Weller’s group , is well developed nowadays and has come to provide synthetic recipes for a wide range of QD sizes and thus tunable emission wavelengths up to the mid-infrared (IR) range, − the research focus has shifted more toward IR-device engineering aspects. Various approaches have been implemented to obtain high-performance optoelectronic devices, such as coupling with plasmonic structures, − ligand engineering, surface chemistry control, , a more sophisticated development of the architecture of the device itself, − and so on. During the past 20 years the field of IR optoelectronic devices based on HgX (X = S, Se, Te) colloidal QDs has experienced impressive developments. , Up to date photodetectors with a responsivity up to 10 6 A/W and detectivity of 10 12 Jones beyond 2 μm have been reported. ,, Recently, by combining HgTe QDs and graphene, the sensitivity of phototransistors was greatly improved at wavelengths up to 3 μm .…”