2002
DOI: 10.1103/physrevb.66.054106
|View full text |Cite
|
Sign up to set email alerts
|

Anomalous broad dielectric relaxation inBi1.5Zn1.0Nb1.5

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

19
115
1
2

Year Published

2004
2004
2016
2016

Publication Types

Select...
7
2

Relationship

0
9

Authors

Journals

citations
Cited by 208 publications
(137 citation statements)
references
References 32 publications
19
115
1
2
Order By: Relevance
“…If we assume that the Pb cations and some of the oxygen anions are dynamically disordered among more equivalent positions with the avarage structure remaining cubic like in isostructural Bi 1.5 ZnNb 1.5 O 7 , 22 , then 14 modes could be IR active, 23 close to our experimental result. The problem with the excess IR active modes is also known from the perovskite PMN , where only 4F 1u polar modes are allowed in F m3m structure, although 7 modes were observed.…”
Section: Resultssupporting
confidence: 77%
“…If we assume that the Pb cations and some of the oxygen anions are dynamically disordered among more equivalent positions with the avarage structure remaining cubic like in isostructural Bi 1.5 ZnNb 1.5 O 7 , 22 , then 14 modes could be IR active, 23 close to our experimental result. The problem with the excess IR active modes is also known from the perovskite PMN , where only 4F 1u polar modes are allowed in F m3m structure, although 7 modes were observed.…”
Section: Resultssupporting
confidence: 77%
“…On the other hand, in the dilute limit, the concentration of defects then increases as a function of temperature (Kohan et al, 2000), which probably leads to an increase in the total number of defect-induced dipole moments and consequently to changes in the dielectric constant. This coincides with the trend observed in the dielectric-temperature spectra of BZN (Kamba et al, 2002). Volanti et al (Volanti et al, 2007) …”
Section: 'Non-stoichiometry' and The Nature Of Defects In Bzn (Liu Etsupporting
confidence: 75%
“…Such behaviour is indicative of displacive motion requiring thermally activated hopping over a potential barrier, which then freezes out at a sufficiently low temperature. The frequency dependence of the peak position in the dielectric loss curve (see Fig.4), following a previous approach (Kamba et al, 2002;Nino et al, 2001), can in general be modelled using either the basic Arrhenius type equation…”
Section: Average Structure and Dielectric Properties Of Bi-based Niobmentioning
confidence: 99%
“…This disorder is expected to be an important ingredient in the physics of BZN since the dielectric properties are believed to be closely associated with the A 2 O 0 network [13].…”
Section: Introductionmentioning
confidence: 99%