Anomalous capacitance in temperature and frequency characteristics of a TiW/<i>p</i>-InP Schottky barrier diode

Wang, Qingsong; Tang, Hengjing; Li, Xue

doi:10.1088/0268-1242/31/6/065023

Cited by 9 publications

(5 citation statements)

References 28 publications

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“…The decrease of the inversion layer capacitance (RB region) can be understood from the perspective of widening of the W dl with rise of the scan frequency, which is caused by the minority charge depletion. In addition, the constant value of the capacitance at 0 V bias ( C = 6.02 ± 0.05 × 10 −6 F), irrespective of the frequency, is more likely to be associated with the device geometric capacitance than the charging of the interface states [ 60 ]. Nonetheless, the heating effects causing a drop of the device resistance or charge carrier generation from the CNF dissolution might be considered as other probable explanations of the phenomenon.…”

Section: Resultsmentioning

confidence: 99%

Experimental Studies on the Dynamic Memcapacitance Modulation of the ReO3@ReS2 Composite Material-Based Diode

et al. 2020

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In this study, both memcapacitive and memristive characteristics in the composite material based on the rhenium disulfide (ReS2) rich in rhenium (VI) oxide (ReO3) surface overlayer (ReO3@ReS2) and in the indium tin oxide (ITO)/ReO3@ReS2/aluminum (Al) device configuration is presented. Comprehensive experimental analysis of the ReO3@ReS2 material properties’ dependence on the memcapacitor electrical characteristics was carried out by standard as well as frequency-dependent current–voltage, capacitance–voltage, and conductance–voltage studies. Furthermore, determination of the charge carrier conduction model, charge carrier mobility, density of the trap states, density of the available charge carrier, free-carrier concentration, effective density of states in the conduction band, activation energy of the carrier transport, as well as ion hopping was successfully conducted for the ReO3@ReS2 based on the experimental data. The ITO/ReO3@ReS2/Al charge carrier conduction was found to rely on the mixed electronic–ionic processes, involving electrochemical metallization and lattice oxygen atoms migration in response to the externally modulated electric field strength. The chemical potential generated by the electronic–ionic ITO/ReO3@ReS2/Al resistive memory cell non-equlibrium processes leads to the occurrence of the nanobattery effect. This finding supports the possibility of a nonvolatile memory cell with a new operation principle based on the potential read function.

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Section: Resultsmentioning

confidence: 99%

Experimental Studies on the Dynamic Memcapacitance Modulation of the ReO3@ReS2 Composite Material-Based Diode

et al. 2020

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“…where δ is the thickness of the interfacial layer oxide, which may exist between the InP substrate and TiW contact due to organic contamination or oxidation in laboratory conditions, [9,[23][24][25][26] and ε i is the permittivity of the interfacial layer oxide. [27,28] The E ss is dependent on frequency f [16] E…”

Section: Resultsmentioning

confidence: 99%

“…The value of R s varies with the applied voltage and frequency, and R s varies from 0 Ω to 7000 Ω at the frequency range from 10 kHz to 200 kHz. [9] The β is used to reflect the R s on the C-V characteristics. The carrier density n d is obtained as follows: And C D is calculated as follows:…”

Section: Resultsmentioning

confidence: 99%

“…[6,7] Furthermore, the common ways to study the interfacial characteristics of SBDs are the capacitance-voltage (C-V ) and current-voltage (I-V ) methods, which have been used to study the interface state (N ss ) and series resistance (R s ) of TiW/p-InP. [8,9] The TiW is one of the widely used alloys in silicon CMOS technology as the diffusion blocking layer. In addition, TiW has been reported as the Schottky contact metal with Si substrate.…”

Section: Introductionmentioning

confidence: 99%

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Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode

Wang¹

2018

Chinese Phys. B

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The capacitance-voltage (C-V ) characteristic of the TiW/p-InP Schottky barrier diodes (SBDs) is analyzed considering the effects of the interface state (N ss ), series resistance (R s ), and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α and β are used to reflect the N ss and R s on the C-V characteristics, respectively. The α decreases with the increase of frequency, while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β . From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.

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“…where Z is a constant, is the barrier height for the electron emission from the trap state and ε sh = 5.8ε 0 is the permittivity of the semiconductor at high frequency. The electric field (ξ) of the Schottky contact can be calculated from the results of C−V measurement [36] :…”

Section: Analysis On Current Leakage Mechanism Of Npolarity Gan Sbd D...mentioning

confidence: 99%

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Xu,

Deng,

et al. 2024

J. Semicond.

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A nitrogen-polarity (N-polarity) GaN-based high electron mobility transistor (HEMT) shows great potential for high-frequency solid-state power amplifier applications because its two-dimensional electron gas (2DEG) density and mobility are minimally affected by device scaling. However, the Schottky barrier height (SBH) of N-polarity GaN is low. This leads to a large gate leakage in N-polarity GaN-based HEMTs. In this work, we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based Schottky barrier diodes (SBDs) with Ni/Au electrodes. Our results show that the annealing time and temperature have a large influence on the electrical properties of N-polarity GaN SBDs. Compared to the N-polarity SBD without annealing, the SBH and rectification ratio at ±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700, respectively, and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing process. Our analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the interface state density between Schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emission from the trap state at low reverse bias.

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Anomalous capacitance in temperature and frequency characteristics of a TiW/p-InP Schottky barrier diode

Cited by 9 publications

References 28 publications

Experimental Studies on the Dynamic Memcapacitance Modulation of the ReO3@ReS2 Composite Material-Based Diode

Experimental Studies on the Dynamic Memcapacitance Modulation of the ReO3@ReS2 Composite Material-Based Diode

Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

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