Abstract:The ferroelastic strain coupling in multiferroic heterostructures is explored aiming at novel physical effects and fascinating functionality. Ferroelastic domain walls in manganites induced by a stripe BiFeO3 template can modulate the electronic transfer and sufficiently block the magnetic ordering, creating a vast anisotropy. The findings suggest the great importance of ferroelastic strain engineering in material modifications.
“…If we remove the bottom SRO layer, the STO/PZT interface becomes macroscopically resistive due to the emerging 90°domains (Fig. 1b ), which effectively block conducting paths and render the insulating or poor conducting state at the STO/PZT interface in a long-range 20 (Supplementary Figure 7 ). Fig.…”
Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the interplay between various degrees of freedom, especially those with polar discontinuities. It is desirable to explore if these structures may generate pure and controllable spin currents, which are needed to attain unmatched performance and energy efficiency in the next-generation spintronic devices. Here we report the emergence of a spin-polarized two-dimensional electron gas (SP-2DEG) at the interface of two insulators, SrTiO3 and PbZr0.2Ti0.8O3. This SP-2DEG is strongly localized at the interfacial Ti atoms, due to the interplay between Coulomb interaction and band bending, and can be tuned by the ferroelectric polarization. Our findings open a door for engineering ferroelectric/insulator interfaces to create tunable ferroic orders for magnetoelectric device applications and provide opportunities for designing multiferroic materials in heterostructures.
“…If we remove the bottom SRO layer, the STO/PZT interface becomes macroscopically resistive due to the emerging 90°domains (Fig. 1b ), which effectively block conducting paths and render the insulating or poor conducting state at the STO/PZT interface in a long-range 20 (Supplementary Figure 7 ). Fig.…”
Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the interplay between various degrees of freedom, especially those with polar discontinuities. It is desirable to explore if these structures may generate pure and controllable spin currents, which are needed to attain unmatched performance and energy efficiency in the next-generation spintronic devices. Here we report the emergence of a spin-polarized two-dimensional electron gas (SP-2DEG) at the interface of two insulators, SrTiO3 and PbZr0.2Ti0.8O3. This SP-2DEG is strongly localized at the interfacial Ti atoms, due to the interplay between Coulomb interaction and band bending, and can be tuned by the ferroelectric polarization. Our findings open a door for engineering ferroelectric/insulator interfaces to create tunable ferroic orders for magnetoelectric device applications and provide opportunities for designing multiferroic materials in heterostructures.
“…Some multiferroic heterostructures have been produced by compound ferromagnetics (Fe 3 O 4 ) with ferroelectrics BaTiO 3 [59], Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT) [60], PdZr x Ti 1-x O 3 (PZT) [61], BiFeO 3 [62], HoMnO 3 , and YMnO 3 [63]. These multiferroic heterostructures show the strong interfacial magnetoelectric effects [64][65][66][67][68][69], which can be used in Electric-field-controlled magnetism and VT in highly correlated Fe 3 O 4 materials have generated great interest recently both scientifically and technologically [51]. Ferroelastic strain control of VT was observed in epitaxial Fe 3 O 4 thin films grown on PMN-PT (011) substrate [4], as shown in four-point geometry (Figure 10(a)).…”
Verwey transition (VT) of Fe3O4 has been extensively investigated as this results in sharp changes in its physical properties. Exploitation of VT for potential applications in spin/charge transport, multiferroicity, exchange bias, and spin Seebeck effect-based devices has attracted researchers recently. Although hundreds of reports have been published, the origin of VT is still debatable. Besides, not only the size effects have a significant impact on VT in Fe3O4, even the conditions of synthesis of Fe3O4 nanostructures mostly affect the changes in VT. Here, we review not only the effects of scaling but also the growth conditions of the Fe3O4 nanostructures on the VT and their novel applications in spintronics and nanotechnology.
“…Recent research shows that the domain walls can exhibit their own distinct chemistry and magnetic behavior . These emergent characteristics have fostered the realization that the domain walls can be used as functional elements in novel nanoelectronic devices . Here, we report observation of the intrinsic conductance of the 71° and 109° domain walls by probing the local conductance over a cross section of the BiFeO 3 /TbScO 3 (001) thin‐film heterostructures.…”
Ferroelectric domain walls are two-dimensional (2D) structural boundaries that separate regions with different orientations of electrical polarization-domains [1] , which exhibit functional characteristics that are completely different from the domains that they delineate. For example, it has been shown that they may be metallic [2] or even superconducting [3] , while the domains that they separate are insulating. Recent research shows that the domain walls can exhibit their own distinct chemistry and magnetic behavior [4-9]. These emergent characteristics have fostered the realization that the domain walls can be used as functional elements in novel nanoelectronic devices [10-13]. Here, we report observation of the intrinsic conductance of the 71° and 109° domain walls by probing the local conductance over a crosssection of the BiFeO 3 /TbScO 3 (001) thin film heterostructures. Through a combination of conductive atomic force microscopy, high-resolution electron energy loss spectroscopy and phase-field
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