Anomalous epitaxial stability of (001) interfaces in ZrN/SiNx multilayers

Ghafoor, Naureen; Lind, Hans; Tasnádi, Ferenc; Abrikosov, Igor A.; Odén, Magnus

doi:10.1063/1.4870876

Cited by 10 publications

(2 citation statements)

References 24 publications

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“…In this case, the epitaxial growth of silicon nitride at the interface of cubic MeN layer results in SiN x layer crystallization. Such an effect is more pronounced for TiN/SiN x and ZrN/SiN x systems [18,[24][25][26], and is less marked for the AlN/SiN x system because the interfaces between AlN and epitaxial Si 3 N 4 only slightly affect the propagation of dislocations. As the result, only a minor hardness enhancement is expected in AlN/SiN x multilayers [27].…”

Section: Introductionmentioning

confidence: 99%

Structural Properties and Oxidation Resistance of ZrN/SiNx, CrN/SiNx and AlN/SiNx Multilayered Films Deposited by Magnetron Sputtering Technique

et al. 2020

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In the present work, the structure, stress state and phase composition of MeN/SiNx (Me = Zr, Cr, Al) multilayered films with the thickness of elementary layers in nanoscale range, as well as their stability to high temperature oxidation, were studied. Monolithic (reference) and multilayered films were deposited on Si substrates at the temperatures of 300 °C (ZrN/SiNx and AlN/SiNx systems) or 450 °C (CrN/SiNx) by reactive magnetron sputtering. The thickness ratios of MeN to SiNx were 5 nm/2 nm, 5 nm/5 nm, 5 nm/10 nm and 2 nm/5 nm. Transmission electron microscopy (TEM), X-ray Reflectivity (XRR) and X-ray Diffraction (XRD) testified to the uniform alternation of MeN and SiNx layers with sharp interlayer boundaries. It was observed that MeN sublayers have a nanocrystalline structure with (001) preferred orientation at 5 nm, but are X-ray amorphous at 2 nm, while SiNx sublayers are always X-ray amorphous. The stability of the coatings to oxidation was investigated by in situ XRD analysis (at the temperature range of 400–950 °C) along with the methods of wavelength-dispersive X-ray spectroscopy (WDS) and scanning electron microscopy (SEM) after air annealing procedure. Reference ZrN and CrN films started to oxidize at the temperatures of 550 and 700 °C, respectively, while the AlN reference film was thermally stable up to 950 °C. Compared to reference monolithic films, MeN/SiNx multilayers have an improved oxidation resistance (onset of oxidation is shifted by more than 200 °C), and the performance is enhanced with increasing fraction of SiNx layer thickness. Overall, CrN/SiNx and AlN/SiNx multilayered films are characterized by noticeably higher resistance to oxidation as compared to ZrN/SiNx multilayers, the best performance being obtained for CrN/SiNx and AlN/SiNx with 5 nm/5 nm and 5 nm/10 nm periods, which remain stable at least up to 950 °C.

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Section: Introductionmentioning

confidence: 99%

Structural Properties and Oxidation Resistance of ZrN/SiNx, CrN/SiNx and AlN/SiNx Multilayered Films Deposited by Magnetron Sputtering Technique

et al. 2020

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“…Superhard materials have been synthesized in the form of superlattices, such as TiN/V(Nb)N [1][2][3] and ZrN/CN [4], or as nanocomposites, ZrN-SiN [5], etc. Three major effects-the lattice strain (coherency) and elastic mismatch [6] and the interfacial chemistry-are generally attributed to the observed interfacial strengthening [7].…”

Section: Introductionmentioning

confidence: 99%

Coherency effects on the mixing thermodynamics of cubicTi1−xAlxN/TiN(001) multilayers

et al. 2016

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In this work, we discuss the mixing thermodynamics of cubic (B1) Ti 1−x Al x N/TiN(001) multilayers. We show that interfacial effects suppress the mixing enthalpy compared to bulk Ti 1−x Al x N. The strongest stabilization occurs for compositions in which the mixing enthalpy of bulk Ti 1−x Al x N has its maximum. The effect is split into a strain and an interfacial (or chemical) contribution, and we show that both contributions are significant. An analysis of the local atomic structure reveals that the Ti atoms located in the interfacial layers relax significantly different from those in the other atomic layers of the multilayer. Considering the electronic structure of the studied system, we demonstrate that the lower Ti-site projected density of states at F in the Ti 1−x Al x N/TiN multilayers compared to the corresponding monolithic bulk explains a decreased tendency toward decomposition.

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Structure and Properties of Combined Multilayer Coatings Based on Alternative Triple Nitride and Binary Metallic Layers

Бондар¹,

Pogrebnjak²,

Takeda³

et al. 2019

Lecture Notes in Mechanical Engineering

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Anomalous epitaxial stability of (001) interfaces in ZrN/SiNx multilayers

Cited by 10 publications

References 24 publications

Structural Properties and Oxidation Resistance of ZrN/SiNx, CrN/SiNx and AlN/SiNx Multilayered Films Deposited by Magnetron Sputtering Technique

Structural Properties and Oxidation Resistance of ZrN/SiNx, CrN/SiNx and AlN/SiNx Multilayered Films Deposited by Magnetron Sputtering Technique

Coherency effects on the mixing thermodynamics of cubicTi1−xAlxN/TiN(001) multilayers

Structure and Properties of Combined Multilayer Coatings Based on Alternative Triple Nitride and Binary Metallic Layers

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