Anomalous Hall Effect in Ge_1-x-yPb_xMn_yTe Composite System

Abstract

The purpose of this study was to investigate the magnetotransport properties of the Ge0.743Pb0.183Mn0.074Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature TSG = 97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p = 6.6 × 10 20 cm −3 , temperature-independent. Magnetoresistance amplitude changes from 0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall eect with hysteresis loops. Calculated anomalous Hall eect coecient, RS = 2.0 × 10 6 m 3 /C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for anomalous Hall eect in Ge0.743Pb0.183Mn0.074Te alloy.

First-Principles Study of the Structural, Electronic, Magnetic and Thermal Properties of the Cr Doped Ge6Mn2Te8 and Ge6Fe2Te8 Systems

“…Due to the exchange interaction between the carriers and the magnetic impurities, the bulk DMS have interesting magnetic and magneto-optical properties [1,2]. The signature characteristic of the DMS is the carrier-mediated ferromagnetic exchange where the magnetic and electronic properties of the microelectronic devices can be linked [3].…”